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Guo, J. J., Pan, D., Yan, X. Q., Fujita, T., Chen, M. W. (2010) Effect of doping and counterdoping on high-pressure phase transitions of silicon. Applied Physics Letters, 96 (25). 251910pp. doi:10.1063/1.3457479

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Reference TypeJournal (article/letter/editorial)
TitleEffect of doping and counterdoping on high-pressure phase transitions of silicon
JournalApplied Physics Letters
AuthorsGuo, J. J.Author
Pan, D.Author
Yan, X. Q.Author
Fujita, T.Author
Chen, M. W.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3457479Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584618Long-form Identifiermindat:1:5:8584618:4
GUID0
Full ReferenceGuo, J. J., Pan, D., Yan, X. Q., Fujita, T., Chen, M. W. (2010) Effect of doping and counterdoping on high-pressure phase transitions of silicon. Applied Physics Letters, 96 (25). 251910pp. doi:10.1063/1.3457479
Plain TextGuo, J. J., Pan, D., Yan, X. Q., Fujita, T., Chen, M. W. (2010) Effect of doping and counterdoping on high-pressure phase transitions of silicon. Applied Physics Letters, 96 (25). 251910pp. doi:10.1063/1.3457479
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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