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Weng, Binbin, Zhao, Fanghai, Ma, Jiangang, Yu, Guangzhe, Xu, Jian, Shi, Zhisheng (2010) Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy. Applied Physics Letters, 96 (25). 251911pp. doi:10.1063/1.3457863

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Reference TypeJournal (article/letter/editorial)
TitleElimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy
JournalApplied Physics Letters
AuthorsWeng, BinbinAuthor
Zhao, FanghaiAuthor
Ma, JiangangAuthor
Yu, GuangzheAuthor
Xu, JianAuthor
Shi, ZhishengAuthor
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3457863Search in ResearchGate
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Mindat Ref. ID8584624Long-form Identifiermindat:1:5:8584624:5
GUID0
Full ReferenceWeng, Binbin, Zhao, Fanghai, Ma, Jiangang, Yu, Guangzhe, Xu, Jian, Shi, Zhisheng (2010) Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy. Applied Physics Letters, 96 (25). 251911pp. doi:10.1063/1.3457863
Plain TextWeng, Binbin, Zhao, Fanghai, Ma, Jiangang, Yu, Guangzhe, Xu, Jian, Shi, Zhisheng (2010) Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy. Applied Physics Letters, 96 (25). 251911pp. doi:10.1063/1.3457863
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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