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Liu, S. H., Hsu, H. S., Venkataiah, G., Qi, X., Lin, C. R., Lee, J. F., Liang, K. S., Huang, J. C. A. (2010) Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO. Applied Physics Letters, 96 (26). 262504pp. doi:10.1063/1.3456381

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Reference TypeJournal (article/letter/editorial)
TitleReduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO
JournalApplied Physics Letters
AuthorsLiu, S. H.Author
Hsu, H. S.Author
Venkataiah, G.Author
Qi, X.Author
Lin, C. R.Author
Lee, J. F.Author
Liang, K. S.Author
Huang, J. C. A.Author
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3456381Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584660Long-form Identifiermindat:1:5:8584660:7
GUID0
Full ReferenceLiu, S. H., Hsu, H. S., Venkataiah, G., Qi, X., Lin, C. R., Lee, J. F., Liang, K. S., Huang, J. C. A. (2010) Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO. Applied Physics Letters, 96 (26). 262504pp. doi:10.1063/1.3456381
Plain TextLiu, S. H., Hsu, H. S., Venkataiah, G., Qi, X., Lin, C. R., Lee, J. F., Liang, K. S., Huang, J. C. A. (2010) Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO. Applied Physics Letters, 96 (26). 262504pp. doi:10.1063/1.3456381
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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