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Pan, Andrew, Pan, Dee-Son, Chui, Chi On (2010) Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon. Applied Physics Letters, 96 (26). 263503pp. doi:10.1063/1.3457468

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Reference TypeJournal (article/letter/editorial)
TitleMechanism for excess noise in mixed tunneling and avalanche breakdown of silicon
JournalApplied Physics Letters
AuthorsPan, AndrewAuthor
Pan, Dee-SonAuthor
Chui, Chi OnAuthor
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3457468Search in ResearchGate
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Mindat Ref. ID8584692Long-form Identifiermindat:1:5:8584692:6
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Full ReferencePan, Andrew, Pan, Dee-Son, Chui, Chi On (2010) Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon. Applied Physics Letters, 96 (26). 263503pp. doi:10.1063/1.3457468
Plain TextPan, Andrew, Pan, Dee-Son, Chui, Chi On (2010) Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon. Applied Physics Letters, 96 (26). 263503pp. doi:10.1063/1.3457468
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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Chen, Edward, Pan, Dee-Son (2011) Influence of anisotropic light-hole band structure on indirect tunneling in silicon. Applied Physics Letters, 98 (17). 173509pp. doi:10.1063/1.3584868
Pan, Andrew, Chui, Chi On (2015) Modeling source-drain tunneling in ultimately scaled IIIā€“V transistors. Applied Physics Letters, 106 (24). 243505pp. doi:10.1063/1.4922840
Lee, Chie-In, Pan, Dee-Son (2006) Theory for high Q p-n junction avalanche inductors. Applied Physics Letters, 89 (1). 13501pp. doi:10.1063/1.2218773
Pan, Andrew, Chui, Chi On (2014) Modeling direct interband tunneling. I. Bulk semiconductors. Journal of Applied Physics, 116 (5). 54508pp. doi:10.1063/1.4891527
Pan, Andrew, Chui, Chi On (2014) Modeling direct interband tunneling. II. Lower-dimensional structures. Journal of Applied Physics, 116 (5). 54509pp. doi:10.1063/1.4891528
Shin, Kyeong-Sik, Pan, Andrew, On Chui, Chi (2012) Channel length dependent sensitivity of Schottky contacted silicon nanowire field-effect transistor sensors. Applied Physics Letters, 100 (12). 123504pp. doi:10.1063/1.3696035
Yang, Chanā€lon, Pan, Deeā€Son (1988) Intersubband absorption of siliconā€based quantum wells for infrared imaging. Journal of Applied Physics, 64 (3). 1573-1575 doi:10.1063/1.341788
Chen, Roger Y., Pan, Deeā€Son (1991) A Monte Carlo study of manyā€valley effects on the temporal electron transient transport in silicon. Journal of Applied Physics, 70 (9). 4938-4945 doi:10.1063/1.349040
Zhao, Mingwen, Pan, Fengchun, Mei, Liangmo (2010) Ferromagnetic ordering of silicon vacancies in N-doped silicon carbide. Applied Physics Letters, 96 (1). 12508pp. doi:10.1063/1.3291562
Kaneda, T., Matsumoto, H., Sakurai, T., Yamaoka, T. (1976) Excess noise in silicon avalanche photodiodes. Journal of Applied Physics, 47 (4). 1605-1607 doi:10.1063/1.322778
Schneider, Harald (2003) Theory of avalanche multiplication and excess noise in quantum-well infrared photodetectors. Applied Physics Letters, 82 (24). 4376-4378 doi:10.1063/1.1585134
 
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