Huang, Jheng-Jie, Yang, Po-Chun, Chen, Shih-Ching, Huang, Hui-Chun, Gan, Der-Shin, Ho, New-Jin, Shi, Yi, Chu, Ann-Kuo (2010) Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory. Applied Physics Letters, 96 (26). 262107pp. doi:10.1063/1.3457870
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory | ||
Journal | Applied Physics Letters | ||
Authors | Huang, Jheng-Jie | Author | |
Yang, Po-Chun | Author | ||
Chen, Shih-Ching | Author | ||
Huang, Hui-Chun | Author | ||
Gan, Der-Shin | Author | ||
Ho, New-Jin | Author | ||
Shi, Yi | Author | ||
Chu, Ann-Kuo | Author | ||
Year | 2010 (June 28) | Volume | 96 |
Issue | 26 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3457870Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8584708 | Long-form Identifier | mindat:1:5:8584708:6 |
GUID | 0 | ||
Full Reference | Huang, Jheng-Jie, Yang, Po-Chun, Chen, Shih-Ching, Huang, Hui-Chun, Gan, Der-Shin, Ho, New-Jin, Shi, Yi, Chu, Ann-Kuo (2010) Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory. Applied Physics Letters, 96 (26). 262107pp. doi:10.1063/1.3457870 | ||
Plain Text | Huang, Jheng-Jie, Yang, Po-Chun, Chen, Shih-Ching, Huang, Hui-Chun, Gan, Der-Shin, Ho, New-Jin, Shi, Yi, Chu, Ann-Kuo (2010) Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory. Applied Physics Letters, 96 (26). 262107pp. doi:10.1063/1.3457870 | ||
In | (2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing |
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