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Huang, Jheng-Jie, Yang, Po-Chun, Chen, Shih-Ching, Huang, Hui-Chun, Gan, Der-Shin, Ho, New-Jin, Shi, Yi, Chu, Ann-Kuo (2010) Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory. Applied Physics Letters, 96 (26). 262107pp. doi:10.1063/1.3457870

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory
JournalApplied Physics Letters
AuthorsHuang, Jheng-JieAuthor
Yang, Po-ChunAuthor
Chen, Shih-ChingAuthor
Huang, Hui-ChunAuthor
Gan, Der-ShinAuthor
Ho, New-JinAuthor
Shi, YiAuthor
Chu, Ann-KuoAuthor
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3457870Search in ResearchGate
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Mindat Ref. ID8584708Long-form Identifiermindat:1:5:8584708:6
GUID0
Full ReferenceHuang, Jheng-Jie, Yang, Po-Chun, Chen, Shih-Ching, Huang, Hui-Chun, Gan, Der-Shin, Ho, New-Jin, Shi, Yi, Chu, Ann-Kuo (2010) Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory. Applied Physics Letters, 96 (26). 262107pp. doi:10.1063/1.3457870
Plain TextHuang, Jheng-Jie, Yang, Po-Chun, Chen, Shih-Ching, Huang, Hui-Chun, Gan, Der-Shin, Ho, New-Jin, Shi, Yi, Chu, Ann-Kuo (2010) Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory. Applied Physics Letters, 96 (26). 262107pp. doi:10.1063/1.3457870
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing


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