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Yin, Hao, Li, Tian-xin, Hu, Wei-da, Wang, Wen-juan, Li, Ning, Chen, Xiao-shuang, Lu, Wei (2010) Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination. Applied Physics Letters, 96 (26). 263508pp. doi:10.1063/1.3457872

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Reference TypeJournal (article/letter/editorial)
TitleNonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination
JournalApplied Physics Letters
AuthorsYin, HaoAuthor
Li, Tian-xinAuthor
Hu, Wei-daAuthor
Wang, Wen-juanAuthor
Li, NingAuthor
Chen, Xiao-shuangAuthor
Lu, WeiAuthor
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3457872Search in ResearchGate
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Mindat Ref. ID8584709Long-form Identifiermindat:1:5:8584709:5
GUID0
Full ReferenceYin, Hao, Li, Tian-xin, Hu, Wei-da, Wang, Wen-juan, Li, Ning, Chen, Xiao-shuang, Lu, Wei (2010) Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination. Applied Physics Letters, 96 (26). 263508pp. doi:10.1063/1.3457872
Plain TextYin, Hao, Li, Tian-xin, Hu, Wei-da, Wang, Wen-juan, Li, Ning, Chen, Xiao-shuang, Lu, Wei (2010) Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination. Applied Physics Letters, 96 (26). 263508pp. doi:10.1063/1.3457872
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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