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Deleruyelle, Damien, Muller, Christophe, Amouroux, Julien, Müller, Robert (2010) Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories. Applied Physics Letters, 96 (26). 263504pp. doi:10.1063/1.3458596

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Reference TypeJournal (article/letter/editorial)
TitleElectrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories
JournalApplied Physics Letters
AuthorsDeleruyelle, DamienAuthor
Muller, ChristopheAuthor
Amouroux, JulienAuthor
Müller, RobertAuthor
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3458596Search in ResearchGate
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Mindat Ref. ID8584725Long-form Identifiermindat:1:5:8584725:3
GUID0
Full ReferenceDeleruyelle, Damien, Muller, Christophe, Amouroux, Julien, Müller, Robert (2010) Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories. Applied Physics Letters, 96 (26). 263504pp. doi:10.1063/1.3458596
Plain TextDeleruyelle, Damien, Muller, Christophe, Amouroux, Julien, Müller, Robert (2010) Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories. Applied Physics Letters, 96 (26). 263504pp. doi:10.1063/1.3458596
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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Müller, R., Genoe, J., Heremans, P. (2009) Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide “switching layer”. Applied Physics Letters, 95 (13). 133509pp. doi:10.1063/1.3242415
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Devulder, Wouter, Opsomer, Karl, Franquet, Alexis, Meersschaut, Johan, Belmonte, Attilio, Muller, Robert, De Schutter, Bob, Van Elshocht, Sven, Jurczak, Malgorzata, Goux, Ludovic, Detavernier, Christophe (2014) Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells. Journal of Applied Physics, 115 (5). 54501pp. doi:10.1063/1.4863722
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Brivio, S., Tallarida, G., Perego, D., Franz, S., Deleruyelle, D., Muller, C., Spiga, S. (2012) Low-power resistive switching in Au/NiO/Au nanowire arrays. Applied Physics Letters, 101 (22). 223510pp. doi:10.1063/1.4769044
Won Seo, Jung, Park, Jae-Woo, Lim, Koeng Su, Yang, Ji-Hwan, Kang, Sang Jung (2010) Erratum: “Transparent resistive random access memory and its characteristics for nonvolatile resistive switching” [Appl. Phys. Lett. 93, 223505 (2008)]. Applied Physics Letters, 96 (14). 149903pp. doi:10.1063/1.3306734
 
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