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Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Pécz, B., Carlin, J.-F., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J. (2010) Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. Applied Physics Letters, 96 (26). 263515pp. doi:10.1063/1.3458700

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Reference TypeJournal (article/letter/editorial)
TitleMetal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
JournalApplied Physics Letters
AuthorsOstermaier, C.Author
Pozzovivo, G.Author
Basnar, B.Author
Schrenk, W.Author
Schmid, M.Author
Tóth, L.Author
Pécz, B.Author
Carlin, J.-F.Author
Gonschorek, M.Author
Grandjean, N.Author
Strasser, G.Author
Pogany, D.Author
Kuzmik, J.Author
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3458700Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584740Long-form Identifiermindat:1:5:8584740:2
GUID0
Full ReferenceOstermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Pécz, B., Carlin, J.-F., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J. (2010) Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. Applied Physics Letters, 96 (26). 263515pp. doi:10.1063/1.3458700
Plain TextOstermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Pécz, B., Carlin, J.-F., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., Kuzmik, J. (2010) Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. Applied Physics Letters, 96 (26). 263515pp. doi:10.1063/1.3458700
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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Pozzovivo, G., Kuzmik, J., Golka, S., Schrenk, W., Strasser, G., Pogany, D., Čičo, K., Ťapajna, M., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N. (2007) Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors. Applied Physics Letters, 91 (4). 43509pp. doi:10.1063/1.2763956
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