Johnson, B. C., Tettamanzi, G. C., Alves, A. D. C., Thompson, S., Yang, C., Verduijn, J., Mol, J. A., Wacquez, R., Vinet, M., Sanquer, M., Rogge, S., Jamieson, D. N. (2010) Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation. Applied Physics Letters, 96 (26). 264102pp. doi:10.1063/1.3458783

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Reference Type	Journal (article/letter/editorial)
Title	Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
Journal	Applied Physics Letters
Authors	Johnson, B. C.		Author
	Tettamanzi, G. C.		Author
	Alves, A. D. C.		Author
	Thompson, S.		Author
	Yang, C.		Author
	Verduijn, J.		Author
	Mol, J. A.		Author
	Wacquez, R.		Author
	Vinet, M.		Author
	Sanquer, M.		Author
	Rogge, S.		Author
	Jamieson, D. N.		Author
Year	2010 (June 28)	Volume	96
Issue	26
Publisher	AIP Publishing
DOI	doi:10.1063/1.3458783Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8584750	Long-form Identifier	mindat:1:5:8584750:9
GUID	0
Full Reference	Johnson, B. C., Tettamanzi, G. C., Alves, A. D. C., Thompson, S., Yang, C., Verduijn, J., Mol, J. A., Wacquez, R., Vinet, M., Sanquer, M., Rogge, S., Jamieson, D. N. (2010) Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation. Applied Physics Letters, 96 (26). 264102pp. doi:10.1063/1.3458783
Plain Text	Johnson, B. C., Tettamanzi, G. C., Alves, A. D. C., Thompson, S., Yang, C., Verduijn, J., Mol, J. A., Wacquez, R., Vinet, M., Sanquer, M., Rogge, S., Jamieson, D. N. (2010) Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation. Applied Physics Letters, 96 (26). 264102pp. doi:10.1063/1.3458783
In	(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

	Klein, M., Mol, J. A., Verduijn, J., Lansbergen, G. P., Rogge, S., Levine, R. D., Remacle, F. (2010) Ternary logic implemented on a single dopant atom field effect silicon transistor. Applied Physics Letters, 96 (4). 43107pp. doi:10.1063/1.3297906
	Verduijn, J., Tettamanzi, G. C., Lansbergen, G. P., Collaert, N., Biesemans, S., Rogge, S. (2010) Coherent transport through a double donor system in silicon. Applied Physics Letters, 96 (7). 72110pp. doi:10.1063/1.3318271
	Tettamanzi, G. C., Verduijn, J., Lansbergen, G. P., Blaauboer, M., Calderón, M. J., Aguado, R., Rogge, S. (2012) Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor. Physical Review Letters, 108 (4). doi:10.1103/physrevlett.108.046803
	*Verduijn, J., Vinet, M., Rogge, S. (2014) Radio-frequency dispersive detection of donor atoms in a field-effect transistor. Applied Physics Letters, 104 (10). 102107pp. doi:10.1063/1.4868423*
	Roche, B., Voisin, B., Jehl, X., Wacquez, R., Sanquer, M., Vinet, M., Deshpande, V., Previtali, B. (2012) A tunable, dual mode field-effect or single electron transistor. Applied Physics Letters, 100 (3). 32107pp. doi:10.1063/1.3678042
	van Donkelaar, Jessica, Yang, C, Alves, A D C, McCallum, J C, Hougaard, C, Johnson, B C, Hudson, F E, Dzurak, A S, Morello, A, Spemann, D, Jamieson, D N (2015) Single atom devices by ion implantation. Journal of Physics: Condensed Matter, 27 (15). 154204pp. doi:10.1088/0953-8984/27/15/154204
	Drumm, V. S., Alves, A. D. C., Fairchild, B. A., Ganesan, K., McCallum, J. C., Jamieson, D. N., Prawer, S., Rubanov, S., Kalish, R., Feldman, L. C. (2011) Surface damage on diamond membranes fabricated by ion implantation and lift-off. Applied Physics Letters, 98 (23). 231904pp. doi:10.1063/1.3597223
	Pierre, M., Roche, B., Wacquez, R., Jehl, X., Sanquer, M., Vinet, M. (2011) Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire. Journal of Applied Physics, 109 (8). 84346pp. doi:10.1063/1.3581122
	*Tettamanzi, G C, Wacquez, R, Rogge, S (2014) Charge pumping through a single donor atom. New Journal of Physics, 16. 63036pp. doi:10.1088/1367-2630/16/6/063036*
	Pierre, M., Wacquez, R., Jehl, X., Sanquer, M., Vinet, M., Cueto, O. (2010) Single-donor ionization energies in a nanoscale CMOS channel. Nature Nanotechnology, 5 (2). 133-137 doi:10.1038/nnano.2009.373
	Rahman, R., Lansbergen, G. P., Verduijn, J., Tettamanzi, G. C., Park, S. H., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S. (2011) Electric field reduced charging energies and two-electron bound excited states of single donors in silicon. Physical Review B, 84 (11) doi:10.1103/physrevb.84.115428

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