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Nomura, Kenji, Aoki, Takashi, Nakamura, Kiyoshi, Kamiya, Toshio, Nakanishi, Takashi, Hasegawa, Takayuki, Kimura, Mutsumi, Kawase, Takeo, Hirano, Masahiro, Hosono, Hideo (2010) Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors. Applied Physics Letters, 96 (26). 263509pp. doi:10.1063/1.3458799

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Reference TypeJournal (article/letter/editorial)
TitleThree-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors
JournalApplied Physics Letters
AuthorsNomura, KenjiAuthor
Aoki, TakashiAuthor
Nakamura, KiyoshiAuthor
Kamiya, ToshioAuthor
Nakanishi, TakashiAuthor
Hasegawa, TakayukiAuthor
Kimura, MutsumiAuthor
Kawase, TakeoAuthor
Hirano, MasahiroAuthor
Hosono, HideoAuthor
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3458799Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584753Long-form Identifiermindat:1:5:8584753:6
GUID0
Full ReferenceNomura, Kenji, Aoki, Takashi, Nakamura, Kiyoshi, Kamiya, Toshio, Nakanishi, Takashi, Hasegawa, Takayuki, Kimura, Mutsumi, Kawase, Takeo, Hirano, Masahiro, Hosono, Hideo (2010) Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors. Applied Physics Letters, 96 (26). 263509pp. doi:10.1063/1.3458799
Plain TextNomura, Kenji, Aoki, Takashi, Nakamura, Kiyoshi, Kamiya, Toshio, Nakanishi, Takashi, Hasegawa, Takayuki, Kimura, Mutsumi, Kawase, Takeo, Hirano, Masahiro, Hosono, Hideo (2010) Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors. Applied Physics Letters, 96 (26). 263509pp. doi:10.1063/1.3458799
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

See Also

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Kimura, Mutsumi, Kamiya, Toshio, Nakanishi, Takashi, Nomura, Kenji, Hosono, Hideo (2010) Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique. Applied Physics Letters, 96 (26). 262105pp. doi:10.1063/1.3455072
Kimura, Mutsumi, Nakanishi, Takashi, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo (2008) Trap densities in amorphous-InGaZnO4 thin-film transistors. Applied Physics Letters, 92 (13). 133512pp. doi:10.1063/1.2904704
Ide, Keisuke, Kikuchi, Yutomo, Nomura, Kenji, Kimura, Mutsumi, Kamiya, Toshio, Hosono, Hideo (2011) Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors. Applied Physics Letters, 99 (9). 93507pp. doi:10.1063/1.3633100
Nomura, Kenji, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo (2009) Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors. Applied Physics Letters, 95 (1). 13502pp. doi:10.1063/1.3159831
Sato, Ayumu, Abe, Katsumi, Hayashi, Ryo, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo (2009) Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor. Applied Physics Letters, 94 (13). 133502pp. doi:10.1063/1.3112566
Ogo, Yoichi, Hiramatsu, Hidenori, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo (2008) p-channel thin-film transistor using p-type oxide semiconductor, SnO. Applied Physics Letters, 93 (3). 32113pp. doi:10.1063/1.2964197
Yabuta, Hisato, Kaji, Nobuyuki, Hayashi, Ryo, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo (2010) Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits. Applied Physics Letters, 97 (7). 72111pp. doi:10.1063/1.3478213
Ogo, Youichi, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo (2008) Amorphous Sn-Ga-Zn-O channel thin-film transistors. physica status solidi (a), 205 (8). 1920-1924 doi:10.1002/pssa.200778908
Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo (2011) Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects. Applied Physics Letters, 99 (5). 53505pp. doi:10.1063/1.3622121
Nomura, Kenji, Ohta, Hiromichi, Takagi, Akihiro, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo (2004) Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, 432 (7016). 488-492 doi:10.1038/nature03090
Nomura, Kenji, Takagi, Akihiro, Kamiya, Toshio, Ohta, Hiromichi, Hirano, Masahiro, Hosono, Hideo (2006) Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors. Japanese Journal of Applied Physics, 45 (5) 4303-4308 doi:10.1143/jjap.45.4303
 
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