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Meneghesso, G., Rossi, F., Salviati, G., Uren, M. J., Muñoz, E., Zanoni, E. (2010) Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 96 (26). 263512pp. doi:10.1063/1.3459968

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Reference TypeJournal (article/letter/editorial)
TitleCorrelation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors
JournalApplied Physics Letters
AuthorsMeneghesso, G.Author
Rossi, F.Author
Salviati, G.Author
Uren, M. J.Author
Muñoz, E.Author
Zanoni, E.Author
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3459968Search in ResearchGate
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Mindat Ref. ID8584799Long-form Identifiermindat:1:5:8584799:8
GUID0
Full ReferenceMeneghesso, G., Rossi, F., Salviati, G., Uren, M. J., Muñoz, E., Zanoni, E. (2010) Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 96 (26). 263512pp. doi:10.1063/1.3459968
Plain TextMeneghesso, G., Rossi, F., Salviati, G., Uren, M. J., Muñoz, E., Zanoni, E. (2010) Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 96 (26). 263512pp. doi:10.1063/1.3459968
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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Meneghini, M., Stocco, A., Ronchi, N., Rossi, F., Salviati, G., Meneghesso, G., Zanoni, E. (2010) Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 97 (6). 63508pp. doi:10.1063/1.3479917
Marko, P., Alexewicz, A., Hilt, O., Meneghesso, G., Zanoni, E., Würfl, J., Strasser, G., Pogany, D. (2012) Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 100 (14). 143507pp. doi:10.1063/1.3701164
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Armani, N., Grillo, V., Salviati, G., Manfredi, M., Pavesi, M., Chini, A., Meneghesso, G., Zanoni, E. (2002) Characterization of GaN-based metal–semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies. Journal of Applied Physics, 92 (5). 2401-2405 doi:10.1063/1.1495536
Meneghini, Matteo, Stocco, Antonio, Silvestri, Riccardo, Meneghesso, Gaudenzio, Zanoni, Enrico (2012) Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons. Applied Physics Letters, 100 (23). 233508pp. doi:10.1063/1.4723848
Killat, N., Uren, M. J., Wallis, D. J., Martin, T., Kuball, M. (2012) Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping. Applied Physics Letters, 101 (15). 153505pp. doi:10.1063/1.4757993
Kordoš, P., Bernát, J., Marso, M., Lüth, H., Rampazzo, F., Tamiazzo, G., Pierobon, R., Meneghesso, G. (2005) Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 86 (25). 253511pp. doi:10.1063/1.1953873
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Kuzmik, J., Jurkovič, M., Gregušová, D., Ťapajna, M., Brunner, F., Cho, M., Meneghesso, G., Würfl, J. (2014) Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown. Journal of Applied Physics, 115 (16). 164504pp. doi:10.1063/1.4873301
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