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Kim, Soo-Jin, Park, Young-Su, Lyu, Si-Hoon, Lee, Jang-Sik (2010) Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers. Applied Physics Letters, 96 (3). 33302pp. doi:10.1063/1.3297878

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Reference TypeJournal (article/letter/editorial)
TitleNonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers
JournalApplied Physics Letters
AuthorsKim, Soo-JinAuthor
Park, Young-SuAuthor
Lyu, Si-HoonAuthor
Lee, Jang-SikAuthor
Year2010 (January 18)Volume96
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3297878Search in ResearchGate
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Mindat Ref. ID8584946Long-form Identifiermindat:1:5:8584946:4
GUID0
Full ReferenceKim, Soo-Jin, Park, Young-Su, Lyu, Si-Hoon, Lee, Jang-Sik (2010) Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers. Applied Physics Letters, 96 (3). 33302pp. doi:10.1063/1.3297878
Plain TextKim, Soo-Jin, Park, Young-Su, Lyu, Si-Hoon, Lee, Jang-Sik (2010) Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers. Applied Physics Letters, 96 (3). 33302pp. doi:10.1063/1.3297878
In(2010, January) Applied Physics Letters Vol. 96 (3) AIP Publishing

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