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Park, Goon-Ho, Cho, Won-Ju (2010) Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application. Applied Physics Letters, 96 (4). 43503pp. doi:10.1063/1.3293291

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Reference TypeJournal (article/letter/editorial)
TitleReliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application
JournalApplied Physics Letters
AuthorsPark, Goon-HoAuthor
Cho, Won-JuAuthor
Year2010 (January 25)Volume96
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3293291Search in ResearchGate
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Mindat Ref. ID8585009Long-form Identifiermindat:1:5:8585009:9
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Full ReferencePark, Goon-Ho, Cho, Won-Ju (2010) Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application. Applied Physics Letters, 96 (4). 43503pp. doi:10.1063/1.3293291
Plain TextPark, Goon-Ho, Cho, Won-Ju (2010) Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application. Applied Physics Letters, 96 (4). 43503pp. doi:10.1063/1.3293291
In(2010, January) Applied Physics Letters Vol. 96 (4) AIP Publishing

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Jung, Myung-Ho, Kim, Kwan-Su, Park, Goon-Ho, Cho, Won-Ju (2009) Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications. Applied Physics Letters, 94 (5). 53508pp. doi:10.1063/1.3078279
You, Hee-Wook, Cho, Won-Ju (2010) Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications. Applied Physics Letters, 96 (9). 93506pp. doi:10.1063/1.3337103
Kim, Eunkyeom, Yim, Taekyung, An, Seungman, Cho, Won-Ju, Park, Kyoungwan (2010) Dual dielectric tunnel barrier in silicon-rich silicon nitride charge-trap nonvolatile memory. Applied Physics Letters, 97 (22). 222107pp. doi:10.1063/1.3521260
Park, Goon-Ho, Kim, Kwan-Su, Jung, Myung-Ho, Cho, Won-Ju, Jung, Jongwan (2009) Electrical Characteristics of SiO$_{2}$/High-k Dielectric Stacked Tunnel Barriers for Nonvolatile Memory Applications. Journal of the Korean Physical Society, 55 (1). 116-119 doi:10.3938/jkps.55.116
Park, Youngmin, Park, Jong Kyung, Song, Myeong Ho, Lim, Sung Kyu, Oh, Jae Sub, Joo, Moon Sig, Hong, Kwon, Cho, Byung Jin (2010) Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices. Applied Physics Letters, 96 (5). 52907pp. doi:10.1063/1.3309693
Park, Jong Kyung, Park, Youngmin, Lim, Sung Kyu, Oh, Jae Sub, Joo, Moon Sig, Hong, Kwon, Cho, Byung Jin (2010) Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device. Applied Physics Letters, 96 (22). 222902pp. doi:10.1063/1.3442502
Kim, Kwan-Su, Jung, Myung-Ho, Park, Goon-Ho, Jung, Jongwan, Cho, Won-Ju (2009) Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO2/HfO2or Al2O3/HfO2Stacks for Nonvolatile Memories. Japanese Journal of Applied Physics, 48 (6) 6 doi:10.1143/jjap.48.06fd11
Park, Young-Su, Chung, Seungjun, Kim, Soo-Jin, Lyu, Si-Hoon, Jang, Jae-Wan, Kwon, Soon-Ki, Hong, Yongtaek, Lee, Jang-Sik (2010) High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene transistors. Applied Physics Letters, 96 (21). 213107pp. doi:10.1063/1.3435470
Chang, M., Hwang, H., Jeon, S. (2010) Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices. Applied Physics Letters, 96 (5). 52106pp. doi:10.1063/1.3295697
Koo, Hyun-Mo, Cho, Won-Ju, Lee, Dong Uk, Kim, Seon Pil, Kim, Eun Kyu (2007) Improvement of charge storage characteristics on floating gated nonvolatile memory devices with In2O3 nanoparticles embedded polyimide gate insulator. Applied Physics Letters, 91 (4). 43513pp. doi:10.1063/1.2764558
Park, Goon-Ho, Kim, Kwan-Soo, Fukidome, Hirokazu, Suemitsu, Tetsuya, Otsuji, Taiichi, Cho, Won-Ju, Suemitsu, Maki (2016) High-performance self-aligned graphene transistors fabricated using contamination- and defect-free process. Japanese Journal of Applied Physics, 55 (6) 6 doi:10.7567/jjap.55.06gf11
 
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