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(2010) Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate: Thermal conductivity of the wafers. Applied Physics Letters, 96 (8). 83101pp. doi:10.1063/1.3324698

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Reference TypeJournal (article/letter/editorial)
TitleScalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate: Thermal conductivity of the wafers
JournalApplied Physics Letters
Year2010 (February 22)Volume96
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.3324698Search in ResearchGate
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Mindat Ref. ID8585859Long-form Identifiermindat:1:5:8585859:6
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Full Reference(2010) Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate: Thermal conductivity of the wafers. Applied Physics Letters, 96 (8). 83101pp. doi:10.1063/1.3324698
Plain Text(2010) Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO2/Si substrate: Thermal conductivity of the wafers. Applied Physics Letters, 96 (8). 83101pp. doi:10.1063/1.3324698
In(2010, February) Applied Physics Letters Vol. 96 (8) AIP Publishing

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Gao, Jianshu, Xie, Danmei, Wang, Xinwei, Zhang, Xin, Yue, Yanan (2020) High thermal conductivity of free-standing skeleton in graphene foam. Applied Physics Letters, 117 (25) 251901pp. doi:10.1063/5.0032408
Mikkelsen, J. C., Galeener, F. L. (1980) Steam thermal SiO2: Preparation and Raman characterization of free‐standing films. Applied Physics Letters, 37 (8). 712-714 doi:10.1063/1.92024
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