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Darakchieva, V., Lorenz, K., Barradas, N. P., Alves, E., Monemar, B., Schubert, M., Franco, N., Hsiao, C. L., Chen, L. C., Schaff, W. J., Tu, L. W., Yamaguchi, T., Nanishi, Y. (2010) Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material. Applied Physics Letters, 96 (8). 81907pp. doi:10.1063/1.3327333

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
JournalApplied Physics Letters
AuthorsDarakchieva, V.Author
Lorenz, K.Author
Barradas, N. P.Author
Alves, E.Author
Monemar, B.Author
Schubert, M.Author
Franco, N.Author
Hsiao, C. L.Author
Chen, L. C.Author
Schaff, W. J.Author
Tu, L. W.Author
Yamaguchi, T.Author
Nanishi, Y.Author
Year2010 (February 22)Volume96
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.3327333Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8585874Long-form Identifiermindat:1:5:8585874:5
GUID0
Full ReferenceDarakchieva, V., Lorenz, K., Barradas, N. P., Alves, E., Monemar, B., Schubert, M., Franco, N., Hsiao, C. L., Chen, L. C., Schaff, W. J., Tu, L. W., Yamaguchi, T., Nanishi, Y. (2010) Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material. Applied Physics Letters, 96 (8). 81907pp. doi:10.1063/1.3327333
Plain TextDarakchieva, V., Lorenz, K., Barradas, N. P., Alves, E., Monemar, B., Schubert, M., Franco, N., Hsiao, C. L., Chen, L. C., Schaff, W. J., Tu, L. W., Yamaguchi, T., Nanishi, Y. (2010) Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material. Applied Physics Letters, 96 (8). 81907pp. doi:10.1063/1.3327333
In(2010, February) Applied Physics Letters Vol. 96 (8) AIP Publishing

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Darakchieva, V., Lorenz, K., Xie, M.-Y., Alves, E., Hsiao, C. L., Chen, L. C., Tu, L. W., Schaff, W. J., Yamaguchi, T., Nanishi, Y. (2011) Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations. Journal of Applied Physics, 110 (6). 63535pp. doi:10.1063/1.3642969
Darakchieva, V., Xie, M.-Y., Franco, N., Giuliani, F., Nunes, B., Alves, E., Hsiao, C. L., Chen, L. C., Yamaguchi, T., Takagi, Y., Kawashima, K., Nanishi, Y. (2010) Structural anisotropy of nonpolar and semipolar InN epitaxial layers. Journal of Applied Physics, 108 (7). 73529pp. doi:10.1063/1.3487923
Darakchieva, V., Schubert, M., Hofmann, T., Monemar, B., Hsiao, Ching-Lien, Liu, Ting-Wei, Chen, Li-Chyong, Schaff, W. J., Takagi, Y., Nanishi, Y. (2009) Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry. Applied Physics Letters, 95 (20). 202103pp. doi:10.1063/1.3261731
Darakchieva, V., Barradas, N.P., Xie, M.-Y., Lorenz, K., Alves, E., Schubert, M., Persson, P.O.Ã…., Giuliani, F., Munnik, F., Hsiao, C.L., Tu, L.W., Schaff, W.J. (2009) Role of impurities and dislocations for the unintentional n-type conductivity in InN. Physica B: Condensed Matter, 404 (22). 4476-4481 doi:10.1016/j.physb.2009.09.042
Tu, L. W., Hsiao, C. L., Chi, T. W., Lo, I., Hsieh, K. Y. (2003) Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy. Applied Physics Letters, 82 (10). 1601-1603 doi:10.1063/1.1558216
Darakchieva, V., Hofmann, T., Schubert, M., Sernelius, B. E., Monemar, B., Persson, P. O. Ã…., Giuliani, F., Alves, E., Lu, H., Schaff, W. J. (2009) Free electron behavior in InN: On the role of dislocations and surface electron accumulation. Applied Physics Letters, 94 (2). 22109pp. doi:10.1063/1.3065030
Darakchieva, V., Lorenz, K., Xie, M.-Y., Alves, E., Schaff, W. J., Yamaguchi, T., Nanishi, Y., Ruffenach, S., Moret, M., Briot, O. (2012) Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN. physica status solidi (a), 209 (1). 91-94 doi:10.1002/pssa.201100175
Darakchieva, V., Paskov, P. P., Valcheva, E., Paskova, T., Monemar, B., Schubert, M., Lu, H., Schaff, W. J. (2004) Deformation potentials of the E1(TO) and E2 modes of InN. Applied Physics Letters, 84 (18). 3636-3638 doi:10.1063/1.1738520
Xie, M.-Y., Schubert, M., Lu, J., Persson, P. O. Ã…., Stanishev, V., Hsiao, C. L., Chen, L. C., Schaff, W. J., Darakchieva, V. (2014) Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN. Physical Review B, 90 (19) doi:10.1103/physrevb.90.195306
Wang, K. R., Tu, L. W., Lin, S. J., Chen, Y. L., Jiang, Z. W., Chen, M., Hsiao, C. L., Cheng, K. H., Yeh, J. W., Chen, S. K. (2006) Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy. physica status solidi (b), 243 (7). 1461-1467 doi:10.1002/pssb.200565449
Xie, M.-Y., Ben Sedrine, N., Schöche, S., Hofmann, T., Schubert, M., Hung, L., Monemar, B., Wang, X., Yoshikawa, A., Wang, K., Araki, T., Nanishi, Y., Darakchieva, V. (2014) Effect of Mg doping on the structural and free-charge carrier properties of InN films. Journal of Applied Physics, 115 (16). 163504pp. doi:10.1063/1.4871975
 
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