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Schutz-Kuchly, T., Veirman, J., Dubois, S., Heslinga, D. R. (2010) Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon. Applied Physics Letters, 96 (9). 93505pp. doi:10.1063/1.3334724

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Reference TypeJournal (article/letter/editorial)
TitleLight-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon
JournalApplied Physics Letters
AuthorsSchutz-Kuchly, T.Author
Veirman, J.Author
Dubois, S.Author
Heslinga, D. R.Author
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3334724Search in ResearchGate
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Mindat Ref. ID8586032Long-form Identifiermindat:1:5:8586032:4
GUID0
Full ReferenceSchutz-Kuchly, T., Veirman, J., Dubois, S., Heslinga, D. R. (2010) Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon. Applied Physics Letters, 96 (9). 93505pp. doi:10.1063/1.3334724
Plain TextSchutz-Kuchly, T., Veirman, J., Dubois, S., Heslinga, D. R. (2010) Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon. Applied Physics Letters, 96 (9). 93505pp. doi:10.1063/1.3334724
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

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Schutz-Kuchly, Thomas, Dubois, SĂ©bastien, Veirman, Jordi, Veschetti, Yannick, Heslinga, Dick, Palais, Olivier (2011) Light-induced degradation in compensated n-type Czochralski silicon solar cells. physica status solidi (a), 208 (3). 572-575 doi:10.1002/pssa.201000218
Veirman, J., Dubois, S., Enjalbert, N., Garandet, J. P., Heslinga, D. R., Lemiti, M. (2011) Hall mobility drops in disordered boron-doped Czochralski silicon compensated by thermal donors activation. physica status solidi (c), 8 (3). 729-732 doi:10.1002/pssc.201000223
Dubois, S., Enjalbert, N., Garandet, J. P. (2008) Slow down of the light-induced-degradation in compensated solar-grade multicrystalline silicon. Applied Physics Letters, 93 (10). 103510pp. doi:10.1063/1.2982098
Geilker, Juliane, Kwapil, Wolfram, Rein, Stefan (2011) Light-induced degradation in compensated p- and n-type Czochralski silicon wafers. Journal of Applied Physics, 109 (5). 53718pp. doi:10.1063/1.3552302
Macdonald, D., Rougieux, F., Cuevas, A., Lim, B., Schmidt, J., Di Sabatino, M., Geerligs, L. J. (2009) Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon. Journal of Applied Physics, 105 (9). 93704pp. doi:10.1063/1.3121208
Chen, Peng, Yu, Xuegong, Wu, Yichao, Zhao, Jianjiang, Yang, Deren (2012) Light-induced degradation in n-type Czochralski silicon by boron-doping and thermal donor compensation. Journal of Applied Physics, 112 (8). 84509pp. doi:10.1063/1.4759245
Veirman, J., Dubois, S., Enjalbert, N., Garandet, J.-P., Lemiti, M. (2011) Electronic properties of highly-doped and compensated solar-grade silicon wafers and solar cells. Journal of Applied Physics, 109 (10). 103711pp. doi:10.1063/1.3585800
Lim, S. Y., Rougieux, F. E., Macdonald, D. (2013) Boron-oxygen defect imaging in p-type Czochralski silicon. Applied Physics Letters, 103 (9). 92105pp. doi:10.1063/1.4819096
Schutz-Kuchly, T., Slaoui, A. (2013) Double layer a-Si:H/SiN:H deposited at low temperature for the passivation of N-type silicon. Applied Physics A, 112. 863-867 doi:10.1007/s00339-013-7802-4
Veirman, J., Martel, B., Dubois, S., Stendera, J. (2014) Effect of dopant compensation on the temperature dependence of the transport properties in p-type monocrystalline silicon. Journal of Applied Physics, 115 (8). 83703pp. doi:10.1063/1.4866695
Voronkov, V. V., Falster, R., Bothe, K., Lim, B., Schmidt, J. (2011) Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon. Journal of Applied Physics, 110 (6). 63515pp. doi:10.1063/1.3609069
 
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