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Liu, H. F., Chua, S. J. (2010) Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing. Applied Physics Letters, 96 (9). 91902pp. doi:10.1063/1.3337099

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Reference TypeJournal (article/letter/editorial)
TitleDoping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing
JournalApplied Physics Letters
AuthorsLiu, H. F.Author
Chua, S. J.Author
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3337099Search in ResearchGate
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Mindat Ref. ID8586048Long-form Identifiermindat:1:5:8586048:5
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Full ReferenceLiu, H. F., Chua, S. J. (2010) Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing. Applied Physics Letters, 96 (9). 91902pp. doi:10.1063/1.3337099
Plain TextLiu, H. F., Chua, S. J. (2010) Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing. Applied Physics Letters, 96 (9). 91902pp. doi:10.1063/1.3337099
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

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Zhang, J., Tang, M. H., He, J. (2010) Doping concentration and thickness effects in ferroelectric thin films. Applied Physics Letters, 96 (12). 122905pp. doi:10.1063/1.3364136
Liu, H. F., Chua, S. J. (2009) Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/Al2O3(0001) thin films grown by rf-magnetron sputtering. Journal of Applied Physics, 106 (2). 23511pp. doi:10.1063/1.3176497
Tan, S. T., Sun, X. W., Zhang, X. H., Chua, S. J., Chen, B. J., Teo, C. C. (2006) Cluster coarsening in zinc oxide thin films by postgrowth annealing. Journal of Applied Physics, 100 (3). 33502pp. doi:10.1063/1.2218468
Liu, H. F., Xiang, N., Chua, S. J., Pessa, M. (2006) Structural and optical properties of GaInAs∕GaAs and GaInNAs∕GaNAs multiple quantum wells upon postgrowth annealing. Applied Physics Letters, 88 (18). 181912pp. doi:10.1063/1.2201618
Liu, H.F., Chua, S.J. (2011) Influence of phosphorus doping and post-growth annealing on electrical and optical properties of ZnO/c-sapphire thin films grown by sputtering. Journal of Crystal Growth, 324 (1). 31-35 doi:10.1016/j.jcrysgro.2011.03.045
Liu, H. F., Chua, S. J. (2009) Erratum: “Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/Al2O3(0001) thin films grown by rf-magnetron sputtering” [J. Appl. Phys. 106, 023511 (2009)]. Journal of Applied Physics, 106 (6). 69901pp. doi:10.1063/1.3238261
Liu, H F, Liu, W, Dolmanan, S B, Tripathy, S, Chua, S J, Chi, D Z (2012) Effects of doping and indium inclusions on the structural and optical properties of InN thin films grown by MOCVD. Journal of Physics D: Applied Physics, 45. 195102pp. doi:10.1088/0022-3727/45/19/195102
Iakovlev, S., Solterbeck, C.-H., Es-Souni, M. (2002) Doping and thickness effects on dielectric properties and subswitching behavior of lead titanate thin films. Applied Physics Letters, 81 (10). 1854-1856 doi:10.1063/1.1504488
Lourdudoss, S., Zhang, S.‐L. (1994) High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing. Applied Physics Letters, 64 (25). 3461-3463 doi:10.1063/1.111241
Kirbach, S., Lederer, M., Eßlinger, S., Mart, C., Czernohorsky, M., Weinreich, W., Wallmersperger, T. (2021) Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films. Applied Physics Letters, 118 (1) 12904pp. doi:10.1063/5.0026990
Saha, S., Nagar, S., Chakrabarti, S. (2014) Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films. Applied Physics Letters, 105 (6). 61109pp. doi:10.1063/1.4893138
 
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