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Balderas-Navarro, R. E., Lastras-Martínez, L. F., Arimoto, K., Castro-García, R., Villalobos-Aguilar, O., Lastras-Martínez, A., Nakagawa, K., Sawano, K., Shiraki, Y., Usami, N., Nakajima, K. (2010) Optical anisotropies of Si grown on step-graded SiGe(110) layers. Applied Physics Letters, 96 (9). 91904pp. doi:10.1063/1.3339881

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Reference TypeJournal (article/letter/editorial)
TitleOptical anisotropies of Si grown on step-graded SiGe(110) layers
JournalApplied Physics Letters
AuthorsBalderas-Navarro, R. E.Author
Lastras-Martínez, L. F.Author
Arimoto, K.Author
Castro-García, R.Author
Villalobos-Aguilar, O.Author
Lastras-Martínez, A.Author
Nakagawa, K.Author
Sawano, K.Author
Shiraki, Y.Author
Usami, N.Author
Nakajima, K.Author
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3339881Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8586072Long-form Identifiermindat:1:5:8586072:2
GUID0
Full ReferenceBalderas-Navarro, R. E., Lastras-Martínez, L. F., Arimoto, K., Castro-García, R., Villalobos-Aguilar, O., Lastras-Martínez, A., Nakagawa, K., Sawano, K., Shiraki, Y., Usami, N., Nakajima, K. (2010) Optical anisotropies of Si grown on step-graded SiGe(110) layers. Applied Physics Letters, 96 (9). 91904pp. doi:10.1063/1.3339881
Plain TextBalderas-Navarro, R. E., Lastras-Martínez, L. F., Arimoto, K., Castro-García, R., Villalobos-Aguilar, O., Lastras-Martínez, A., Nakagawa, K., Sawano, K., Shiraki, Y., Usami, N., Nakajima, K. (2010) Optical anisotropies of Si grown on step-graded SiGe(110) layers. Applied Physics Letters, 96 (9). 91904pp. doi:10.1063/1.3339881
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

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Hoshi, Y., Sawano, K., Yamada, A., Usami, N., Arimoto, K., Nakagawa, K., Shiraki, Y. (2010) Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique. Journal of Applied Physics, 107 (10). 103509pp. doi:10.1063/1.3374688
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