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Commin, J. P., Kennedy, K., Revin, D. G., Zhang, S. Y., Krysa, A. B., Cockburn, J. W. (2010) λ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating. Applied Physics Letters, 97 (11). 111113pp. doi:10.1063/1.3487781

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Reference TypeJournal (article/letter/editorial)
Titleλ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating
JournalApplied Physics Letters
AuthorsCommin, J. P.Author
Kennedy, K.Author
Revin, D. G.Author
Zhang, S. Y.Author
Krysa, A. B.Author
Cockburn, J. W.Author
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3487781Search in ResearchGate
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Mindat Ref. ID8586461Long-form Identifiermindat:1:5:8586461:2
GUID0
Full ReferenceCommin, J. P., Kennedy, K., Revin, D. G., Zhang, S. Y., Krysa, A. B., Cockburn, J. W. (2010) λ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating. Applied Physics Letters, 97 (11). 111113pp. doi:10.1063/1.3487781
Plain TextCommin, J. P., Kennedy, K., Revin, D. G., Zhang, S. Y., Krysa, A. B., Cockburn, J. W. (2010) λ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating. Applied Physics Letters, 97 (11). 111113pp. doi:10.1063/1.3487781
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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Commin, J. P., Revin, D. G., Zhang, S. Y., Krysa, A. B., Kennedy, K., Cockburn, J. W. (2010) High peak power λ∼3.3 and 3.5 μm InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K. Applied Physics Letters, 97 (3). 31108pp. doi:10.1063/1.3464551
Zhang, S. Y., Revin, D. G., Cockburn, J. W., Kennedy, K., Krysa, A. B., Hopkinson, M. (2009) λ∼3.1 μm room temperature InGaAs/AlAsSb/InP quantum cascade lasers. Applied Physics Letters, 94 (3). 31106pp. doi:10.1063/1.3073865
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