Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf (2010) Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal. Applied Physics Letters, 97 (11). 113501pp. doi:10.1063/1.3488024

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleExperimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal
JournalApplied Physics Letters
AuthorsVisalli, DomenicaAuthor
Van Hove, MarleenAuthor
Srivastava, PuneetAuthor
Derluyn, JoffAuthor
Das, JohanAuthor
Leys, MaartenAuthor
Degroote, StefanAuthor
Cheng, KaiAuthor
Germain, MarianneAuthor
Borghs, GustaafAuthor
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3488024Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8586486Long-form Identifiermindat:1:5:8586486:1
GUID0
Full ReferenceVisalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf (2010) Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal. Applied Physics Letters, 97 (11). 113501pp. doi:10.1063/1.3488024
Plain TextVisalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf (2010) Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal. Applied Physics Letters, 97 (11). 113501pp. doi:10.1063/1.3488024
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Borghs, Gustaaf (2009) High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880835
Visalli, Domenica, Van Hove, Marleen, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf (2009) AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance. Japanese Journal of Applied Physics, 48 (4) 4 doi:10.1143/jjap.48.04c101
Srivastava, Puneet, Das, Jo, Visalli, Domenica, Van Hove, Marleen, Malinowski, Pawel E., Marcon, Denis, Cheng, Kai, Geens, Karen, Leys, Maarten, Decoutere, Stefaan, Mertens, Robert P., Borghs, Gustaaf (2011) Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal. physica status solidi (c), 8 (7). 2216-2218 doi:10.1002/pssc.201001023
Marcon, Denis, Van Hove, Marleen, Visalli, Domenica, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf (2010) Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04df07
Marcon, Denis, Lorenz, Anne, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf (2009) GaN-on-Si HEMT stress under high electric field condition. physica status solidi (c), 6. doi:10.1002/pssc.200880885
Cheng, Kai, Leys, Maarten, Degroote, Stefan, Derluyn, Joff, Sijmus, Brian, Favia, Paola, Richard, Olivier, Bender, Hugo, Germain, Marianne, Borghs, Gustaaf (2008) AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity. Japanese Journal of Applied Physics, 47 (3) 1553-1555 doi:10.1143/jjap.47.1553
Wang, Wenfei, Derluyn, Joff, Germain, Marianne, Leys, Maarten, Degroote, Stefan, Schreurs, Dominique, Borghs, Gustaaf (2006) Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures. Japanese Journal of Applied Physics, 45. doi:10.1143/jjap.45.l224
Lorenz, Anne, Derluyn, Joff, Das, Jo, Cheng, Kai, Degroote, Stefan, Medjdoub, Farid, Germain, Marianne, Borghs, Gustaaf (2009) Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs. physica status solidi (c), 6. doi:10.1002/pssc.200880838
Simoen, Eddy, Visalli, Domenica, Van Hove, Marleen, Leys, Maarten, Favia, Paola, Bender, Hugo, Borghs, Gustaaf, Nguyen, Ahn Puc Duc, Stesmans, Andre (2012) Electrically active defects at AlN/Si interface studied by DLTS and ESR. physica status solidi (a), 209 (10). 1851-1856 doi:10.1002/pssa.201200061
Cheng, Kai, Leys, M., Derluyn, J., Balachander, K., Degroote, S., Germain, M., Borghs, G. (2008) AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE. physica status solidi (c), 5 (6). 1600-1602 doi:10.1002/pssc.200778518
Germain, M., Cheng, K., Derluyn, J., Degroote, S., Das, J., Lorenz, A., Marcon, D., Hove, M. Van, Leys, M., Borghs, G. (2008) In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111). physica status solidi (c), 5 (6). 2010-2012 doi:10.1002/pssc.200778688
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 24, 2025 03:34:18
Go to top of page