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Chang, Y. C., Merckling, C., Penaud, J., Lu, C. Y., Wang, W.-E., Dekoster, J., Meuris, M., Caymax, M., Heyns, M., Kwo, J., Hong, M. (2010) Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing. Applied Physics Letters, 97 (11). 112901pp. doi:10.1063/1.3488813

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Reference TypeJournal (article/letter/editorial)
TitleEffective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
JournalApplied Physics Letters
AuthorsChang, Y. C.Author
Merckling, C.Author
Penaud, J.Author
Lu, C. Y.Author
Wang, W.-E.Author
Dekoster, J.Author
Meuris, M.Author
Caymax, M.Author
Heyns, M.Author
Kwo, J.Author
Hong, M.Author
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3488813Search in ResearchGate
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Mindat Ref. ID8586493Long-form Identifiermindat:1:5:8586493:1
GUID0
Full ReferenceChang, Y. C., Merckling, C., Penaud, J., Lu, C. Y., Wang, W.-E., Dekoster, J., Meuris, M., Caymax, M., Heyns, M., Kwo, J., Hong, M. (2010) Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing. Applied Physics Letters, 97 (11). 112901pp. doi:10.1063/1.3488813
Plain TextChang, Y. C., Merckling, C., Penaud, J., Lu, C. Y., Wang, W.-E., Dekoster, J., Meuris, M., Caymax, M., Heyns, M., Kwo, J., Hong, M. (2010) Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing. Applied Physics Letters, 97 (11). 112901pp. doi:10.1063/1.3488813
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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