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Linhart, W. M., Veal, T. D., King, P. D. C., Koblmüller, G., Gallinat, C. S., Speck, J. S., McConville, C. F. (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, 97 (11). 112103pp. doi:10.1063/1.3488821

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Reference TypeJournal (article/letter/editorial)
TitleSurface, bulk, and interface electronic properties of nonpolar InN
JournalApplied Physics Letters
AuthorsLinhart, W. M.Author
Veal, T. D.Author
King, P. D. C.Author
Koblmüller, G.Author
Gallinat, C. S.Author
Speck, J. S.Author
McConville, C. F.Author
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3488821Search in ResearchGate
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Mindat Ref. ID8586502Long-form Identifiermindat:1:5:8586502:8
GUID0
Full ReferenceLinhart, W. M., Veal, T. D., King, P. D. C., Koblmüller, G., Gallinat, C. S., Speck, J. S., McConville, C. F. (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, 97 (11). 112103pp. doi:10.1063/1.3488821
Plain TextLinhart, W. M., Veal, T. D., King, P. D. C., Koblmüller, G., Gallinat, C. S., Speck, J. S., McConville, C. F. (2010) Surface, bulk, and interface electronic properties of nonpolar InN. Applied Physics Letters, 97 (11). 112103pp. doi:10.1063/1.3488821
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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King, P. D. C., Veal, T. D., Gallinat, C. S., Koblmüller, G., Bailey, L. R., Speck, J. S., McConville, C. F. (2008) Influence of growth conditions and polarity on interface-related electron density in InN. Journal of Applied Physics, 104 (10). 103703pp. doi:10.1063/1.3020528
Rauch, C., Reurings, F., Tuomisto, F., Veal, T. D., McConville, C. F., Lu, H., Schaff, W. J., Gallinat, C. S., Koblmüller, G., Speck, J. S., Egger, W., Löwe, B., Ravelli, L., Sojak, S. (2010) In-vacancies in Si-doped InN. physica status solidi (a), 207 (5). 1083-1086 doi:10.1002/pssa.200983120
King, P. D. C., Veal, T. D., Hatfield, S. A., Jefferson, P. H., McConville, C. F., Kendrick, C. E., Swartz, C. H., Durbin, S. M. (2007) X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. Applied Physics Letters, 91 (11). 112103pp. doi:10.1063/1.2783214
Linhart, W. M., Chai, J., McConville, C. F., Durbin, S. M., Veal, T. D. (2013) Sulfur passivation of surface electrons in highly Mg-doped InN. Journal of Applied Physics, 114 (10). 103702pp. doi:10.1063/1.4820483
Koblmüller, G., Metcalfe, G. D., Wraback, M., Wu, F., Gallinat, C. S., Speck, J. S. (2009) In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN. Applied Physics Letters, 94 (9). 91905pp. doi:10.1063/1.3092482
King, P. D. C., Veal, T. D., Lowe, M. J., McConville, C. F. (2008) Surface electronic properties of clean and S-terminated InSb(001) and (111)B. Journal of Applied Physics, 104 (8). 83709pp. doi:10.1063/1.3000567
Koblmüller, G., Gallinat, C. S., Bernardis, S., Speck, J. S., Chern, G. D., Readinger, E. D., Shen, H., Wraback, M. (2006) Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy. Applied Physics Letters, 89 (7). 71902pp. doi:10.1063/1.2335685
King, P. D. C., Veal, T. D., Adikimenakis, A., Lu, Hai, Bailey, L. R., Iliopoulos, E., Georgakilas, A., Schaff, W. J., McConville, C. F. (2008) Surface electronic properties of undoped InAlN alloys. Applied Physics Letters, 92 (17). 172105pp. doi:10.1063/1.2913765
Koblmüller, G., Hirai, A., Wu, F., Gallinat, C. S., Metcalfe, G. D., Shen, H., Wraback, M., Speck, J. S. (2008) Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN. Applied Physics Letters, 93 (17). 171902pp. doi:10.1063/1.3001806
Gallinat, C. S., Koblmüller, G., Wu, Feng, Speck, J. S. (2010) Evaluation of threading dislocation densities in In- and N-face InN. Journal of Applied Physics, 107 (5). 53517pp. doi:10.1063/1.3319557
Linhart, W. M., Chai, J., Morris, R. J. H., Dowsett, M. G., McConville, C. F., Durbin, S. M., Veal, T. D. (2012) Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants. Physical Review Letters, 109 (24). doi:10.1103/physrevlett.109.247605
 
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