Reference Type | Journal (article/letter/editorial) |
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Title | Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes |
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Journal | Applied Physics Letters |
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Authors | Lee, Hsin-Ying | Author |
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Lee, Ching-Ting | Author |
Yan, Jheng-Tai | Author |
Year | 2010 (September 13) | Volume | 97 |
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Issue | 11 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.3490652Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8586568 | Long-form Identifier | mindat:1:5:8586568:4 |
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GUID | 0 |
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Full Reference | Lee, Hsin-Ying, Lee, Ching-Ting, Yan, Jheng-Tai (2010) Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes. Applied Physics Letters, 97 (11). 111111pp. doi:10.1063/1.3490652 |
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Plain Text | Lee, Hsin-Ying, Lee, Ching-Ting, Yan, Jheng-Tai (2010) Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes. Applied Physics Letters, 97 (11). 111111pp. doi:10.1063/1.3490652 |
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In | (2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing |
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