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Manaka, Takaaki, Kawashima, Satoshi, Iwamoto, Mitsumasa (2010) Charge modulated reflectance topography for probing in-plane carrier distribution in pentacene field-effect transistors. Applied Physics Letters, 97 (11). 113302pp. doi:10.1063/1.3490716

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Reference TypeJournal (article/letter/editorial)
TitleCharge modulated reflectance topography for probing in-plane carrier distribution in pentacene field-effect transistors
JournalApplied Physics Letters
AuthorsManaka, TakaakiAuthor
Kawashima, SatoshiAuthor
Iwamoto, MitsumasaAuthor
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3490716Search in ResearchGate
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Mindat Ref. ID8586583Long-form Identifiermindat:1:5:8586583:3
GUID0
Full ReferenceManaka, Takaaki, Kawashima, Satoshi, Iwamoto, Mitsumasa (2010) Charge modulated reflectance topography for probing in-plane carrier distribution in pentacene field-effect transistors. Applied Physics Letters, 97 (11). 113302pp. doi:10.1063/1.3490716
Plain TextManaka, Takaaki, Kawashima, Satoshi, Iwamoto, Mitsumasa (2010) Charge modulated reflectance topography for probing in-plane carrier distribution in pentacene field-effect transistors. Applied Physics Letters, 97 (11). 113302pp. doi:10.1063/1.3490716
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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Manaka, Takaaki, Kawashima, Satoshi, Iwamoto, Mitsumasa (2011) Charge modulation spectroscopy for probing ambipolar carrier injection into pentacene field effect transistors. Physics Procedia, 14. 209-212 doi:10.1016/j.phpro.2011.05.042
Manaka, Takaaki, Kawashima, Satoshi, Iwamoto, Mitsumasa (2011) Evaluation of Carrier Density in Organic Field-Effect Transistor by Charge Modulated Spectroscopy. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dk12
Manaka, Takaaki, Kawashima, Satoshi, Iwamoto, Mitsumasa (2011) Evaluation of Carrier Density in Organic Field-Effect Transistor by Charge Modulated Spectroscopy. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dk12
Weis, Martin, Lin, Jack, Taguchi, Dai, Manaka, Takaaki, Iwamoto, Mitsumasa (2010) Insight into the contact resistance problem by direct probing of the potential drop in organic field-effect transistors. Applied Physics Letters, 97 (26). 263304pp. doi:10.1063/1.3533020
Ou-Yang, Wei, Weis, Martin, Taguchi, Dai, Chen, Xiangyu, Manaka, Takaaki, Iwamoto, Mitsumasa (2010) Modeling of threshold voltage in pentacene organic field-effect transistors. Journal of Applied Physics, 107 (12). 124506pp. doi:10.1063/1.3449078
Lim, Eunju, Yamada, Daisuke, Weis, Martin, Manaka, Takaaki, Iwamoto, Mitsumasa (2009) Probing of channel region in pentacene field effect transistors by optical second harmonic generation. Chemical Physics Letters, 477. 221-224 doi:10.1016/j.cplett.2009.06.068
Manaka, Takaaki, Lim, Eunju, Tamura, Ryosuke, Iwamoto, Mitsumasa (2005) Modulation in optical second harmonic generation signal from channel of pentacene field effect transistors during device operation. Applied Physics Letters, 87 (22). 222107pp. doi:10.1063/1.2136075
Tanaka, Yasuyuki, Manaka, Takaaki, Iwamoto, Mitsumasa (2011) Study of trap-filling effect on transient carrier transport in pentacene field effect transistors by time-resolved optical second harmonic generation. Chemical Physics Letters, 507. 195-198 doi:10.1016/j.cplett.2011.03.068
Yamada, Daisuke, Manaka, Takaaki, Lim, Eunju, Tamura, Ryousuke, Weis, Martin, Iwamoto, Mitsumasa (2008) Injected carrier distribution in a pentacene field effect transistor probed using optical second harmonic generation. Journal of Applied Physics, 104 (7). 74502pp. doi:10.1063/1.2988137
Nakao, Motoharu, Manaka, Takaaki, Weis, Martin, Lim, Eunju, Iwamoto, Mitsumasa (2009) Probing carrier injection into pentacene field effect transistor by time-resolved microscopic optical second harmonic generation measurement. Journal of Applied Physics, 106 (1). 14511pp. doi:10.1063/1.3168434
Liu, Fei, Lin, Jack, Manaka, Takaaki, Iwamoto, Mitsumasa (2011) Modeling carrier transport and electric field evolution in Gaussian disordered organic field-effect transistors. Journal of Applied Physics, 109 (10). 104512pp. doi:10.1063/1.3590154
 
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