Kuo, Cheng-Wen, Wu, San-Lein, Chang, Shoou-Jinn, Huang, Yao-Tsung, Cheng, Yao-Chin, Cheng, Osbert (2010) Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors. Applied Physics Letters, 97 (12). 123501pp. doi:10.1063/1.3491211
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors | ||
| Journal | Applied Physics Letters | ||
| Authors | Kuo, Cheng-Wen | Author | |
| Wu, San-Lein | Author | ||
| Chang, Shoou-Jinn | Author | ||
| Huang, Yao-Tsung | Author | ||
| Cheng, Yao-Chin | Author | ||
| Cheng, Osbert | Author | ||
| Year | 2010 (September 20) | Volume | 97 |
| Issue | 12 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3491211Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8586670 | Long-form Identifier | mindat:1:5:8586670:8 |
| GUID | 0 | ||
| Full Reference | Kuo, Cheng-Wen, Wu, San-Lein, Chang, Shoou-Jinn, Huang, Yao-Tsung, Cheng, Yao-Chin, Cheng, Osbert (2010) Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors. Applied Physics Letters, 97 (12). 123501pp. doi:10.1063/1.3491211 | ||
| Plain Text | Kuo, Cheng-Wen, Wu, San-Lein, Chang, Shoou-Jinn, Huang, Yao-Tsung, Cheng, Yao-Chin, Cheng, Osbert (2010) Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors. Applied Physics Letters, 97 (12). 123501pp. doi:10.1063/1.3491211 | ||
| In | (2010, September) Applied Physics Letters Vol. 97 (12) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
