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Jolley, Greg, Lu, Hao Feng, Fu, Lan, Tan, Hark Hoe, Jagadish, Chennupati (2010) Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage. Applied Physics Letters, 97 (12). 123505pp. doi:10.1063/1.3492836

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Reference TypeJournal (article/letter/editorial)
TitleElectron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage
JournalApplied Physics Letters
AuthorsJolley, GregAuthor
Lu, Hao FengAuthor
Fu, LanAuthor
Tan, Hark HoeAuthor
Jagadish, ChennupatiAuthor
Year2010 (September 20)Volume97
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.3492836Search in ResearchGate
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Mindat Ref. ID8586729Long-form Identifiermindat:1:5:8586729:3
GUID0
Full ReferenceJolley, Greg, Lu, Hao Feng, Fu, Lan, Tan, Hark Hoe, Jagadish, Chennupati (2010) Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage. Applied Physics Letters, 97 (12). 123505pp. doi:10.1063/1.3492836
Plain TextJolley, Greg, Lu, Hao Feng, Fu, Lan, Tan, Hark Hoe, Jagadish, Chennupati (2010) Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage. Applied Physics Letters, 97 (12). 123505pp. doi:10.1063/1.3492836
In(2010, September) Applied Physics Letters Vol. 97 (12) AIP Publishing

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Lu, Hao Feng, Fu, Lan, Jolley, Greg, Tan, Hark Hoe, Tatavarti, Sudersena Rao, Jagadish, Chennupati (2011) Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells. Applied Physics Letters, 98 (18). 183509pp. doi:10.1063/1.3586251
Feng Lu, Hao, Mokkapati, Sudha, Fu, Lan, Jolley, Greg, Hoe Tan, Hark, Jagadish, Chennupati (2012) Plasmonic quantum dot solar cells for enhanced infrared response. Applied Physics Letters, 100 (10). 103505pp. doi:10.1063/1.3691917
Jolley, Gregory, Fu, Lan, Tan, Hark Hoe, Jagadish, Chennupati (2010) The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors. Nanoscale, 2. 1128pp. doi:10.1039/c0nr00128g
Lu, Haofeng, Fu, Lan, Tan, Hark Hoe, Jagadish, Chennupati, Dagenais, Mario (2015) Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells. Applied Physics Letters, 106 (5). 53902pp. doi:10.1063/1.4907348
McKerracher, Ian, Fu, Lan, Hoe Tan, Hark, Jagadish, Chennupati (2012) Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers. Journal of Applied Physics, 112 (11). 113511pp. doi:10.1063/1.4768283
Jolley, G., Fu, L., Tan, H. H., Jagadish, C. (2008) Effects of well thickness on the spectral properties of In0.5Ga0.5As∕GaAs∕Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors. Applied Physics Letters, 92 (19). 193507pp. doi:10.1063/1.2927487
Liu, Danyu, Hattori, Haroldo T., Fu, Lan, Tan, Hark Hoe., Jagadish, Chennupati (2010) Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures. Journal of Applied Physics, 107 (4). 43105pp. doi:10.1063/1.3309748
Sun, Wen, Guo, Yanan, Xu, Hongyi, Gao, Qiang, Hoe Tan, Hark, Jagadish, Chennupati, Zou, Jin (2013) Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate. Applied Physics Letters, 103 (22). 223104pp. doi:10.1063/1.4834377
Raj, Vidur, dos Santos, Tâmara Sibele, Rougieux, Fiacre, Vora, Kaushal, Lysevych, Mykhaylo, Fu, Lan, Mokkapati, Sudha, Tan, Hark Hoe, Jagadish, Chennupati (2018) Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer. Journal of Physics D: Applied Physics, 51. 395301pp. doi:10.1088/1361-6463/aad7e3
Jolley, G., McKerracher, I., Fu, L., Tan, H. H., Jagadish, C. (2012) The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors. Journal of Applied Physics, 111 (12). 123719pp. doi:10.1063/1.4729833
Jolley, G, Fu, L, Tan, H H, Jagadish, C (2009) Properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors. Journal of Physics D: Applied Physics, 42. 95101pp. doi:10.1088/0022-3727/42/9/095101
 
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