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Minj, A., Cavalcoli, D., Cavallini, A. (2010) Indium segregation in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 97 (13). 132114pp. doi:10.1063/1.3489433

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Reference TypeJournal (article/letter/editorial)
TitleIndium segregation in AlInN/AlN/GaN heterostructures
JournalApplied Physics Letters
AuthorsMinj, A.Author
Cavalcoli, D.Author
Cavallini, A.Author
Year2010 (September 27)Volume97
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3489433Search in ResearchGate
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Mindat Ref. ID8586783Long-form Identifiermindat:1:5:8586783:1
GUID0
Full ReferenceMinj, A., Cavalcoli, D., Cavallini, A. (2010) Indium segregation in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 97 (13). 132114pp. doi:10.1063/1.3489433
Plain TextMinj, A., Cavalcoli, D., Cavallini, A. (2010) Indium segregation in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 97 (13). 132114pp. doi:10.1063/1.3489433
In(2010, September) Applied Physics Letters Vol. 97 (13) AIP Publishing

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Minj, A., Cavalcoli, D., Cavallini, A. (2012) Structural and local electrical properties of AlInN/AlN/GaN heterostructures. Physica B: Condensed Matter, 407 (15). 2838-2840 doi:10.1016/j.physb.2011.08.035
Pandey, S., Fraboni, B., Cavalcoli, D., Minj, A., Cavallini, A. (2011) Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures. Applied Physics Letters, 99 (1). 12111pp. doi:10.1063/1.3608162
Minj, A, Cavalcoli, D, Cavallini, A (2011) Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods. Journal of Physics: Conference Series, 326. 12011pp. doi:10.1088/1742-6596/326/1/012011
Pandey, S., Cavalcoli, D., Fraboni, B., Cavallini, A., Brazzini, T., Calle, F. (2012) Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures. Applied Physics Letters, 100 (15). 152116pp. doi:10.1063/1.4703938
Cavalcoli, Daniela, Pandey, Saurabh, Fraboni, Beatrice, Cavallini, Anna (2011) Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy. Applied Physics Letters, 98 (14). 142111pp. doi:10.1063/1.3576938
Pandey, Saurabh, Fraboni, Beatrice, Cavalcoli, Daniela, Minj, Albert, Cavallini, Anna (2012) Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures. physica status solidi (c), 9 (3). 986-988 doi:10.1002/pssc.201100096
Pandey, S., Cavalcoli, D., Minj, A., Fraboni, B., Cavallini, A., Gamarra, P., Poisson, M. A. (2012) Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy. Journal of Applied Physics, 112 (12). 123721pp. doi:10.1063/1.4771676
Pandey, S., Cavalcoli, D., Fraboni, B., Cavallini, A., Brazzini, T., Calle, F. (2012) Erratum: “Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures” [Appl. Phys. Lett. 100, 152116 (2012)]. Applied Physics Letters, 100 (21). 219901pp. doi:10.1063/1.4720077
Tanvir Hasan, Md., Tokuda, Hirokuni, Kuzuhara, Masaaki (2011) Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures. Applied Physics Letters, 99 (13). 132102pp. doi:10.1063/1.3644161
Cavalcoli, D., Minj, A., Fazio, M.A., Cros, A., Heuken, M. (2020) Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage. Applied Surface Science, 515. 146016pp. doi:10.1016/j.apsusc.2020.146016
Pandey, Saurabh, Cavalcoli, Daniela, Fraboni, Beatrice, Cavallini, Anna (2012) Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures. physica status solidi (c), 9 (3). 693-696 doi:10.1002/pssc.201100359
 
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