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Quitoriano, Nathaniel J. (2010) Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics. Applied Physics Letters, 97 (13). 132110pp. doi:10.1063/1.3495799

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Reference TypeJournal (article/letter/editorial)
TitleLateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics
JournalApplied Physics Letters
AuthorsQuitoriano, Nathaniel J.Author
Year2010 (September 27)Volume97
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3495799Search in ResearchGate
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Mindat Ref. ID8586919Long-form Identifiermindat:1:5:8586919:4
GUID0
Full ReferenceQuitoriano, Nathaniel J. (2010) Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics. Applied Physics Letters, 97 (13). 132110pp. doi:10.1063/1.3495799
Plain TextQuitoriano, Nathaniel J. (2010) Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics. Applied Physics Letters, 97 (13). 132110pp. doi:10.1063/1.3495799
In(2010, September) Applied Physics Letters Vol. 97 (13) AIP Publishing

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Luryi, Serge, Suhir, Ephraim (1986) New approach to the high quality epitaxial growth of lattice‐mismatched materials. Applied Physics Letters, 49 (3). 140-142 doi:10.1063/1.97204
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Lee, K. H., Chang, S. J., Chang, P. C., Wang, Y. C., Kuo, C. H. (2008) High quality GaN-based Schottky barrier diodes. Applied Physics Letters, 93 (13). 132110pp. doi:10.1063/1.2993353
Blunier, S., Zogg, H., Weibel, H. (1988) Growth of lattice‐mismatched stacked epitaxial CaF2‐SrF2‐BaF2layers on (100) oriented Si substrates. Applied Physics Letters, 53 (16). 1512-1514 doi:10.1063/1.100432
Yu, Hyun-Yong, Cheng, Szu-lin, Park, Jin-Hong, Okyay, Ali K., Onbaşlı, M. Cengiz, Ercan, Burcu, Nishi, Yoshio, Saraswat, Krishna C. (2010) High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing. Applied Physics Letters, 97 (6). 63503pp. doi:10.1063/1.3478242
Wang, Kai, Chen, Feng, Belev, George, Kasap, Safa, Karim, Karim S. (2009) Lateral metal-semiconductor-metal photodetectors based on amorphous selenium. Applied Physics Letters, 95 (1). 13505pp. doi:10.1063/1.3173818
Wang, Weizhen, Quitoriano, Nathaniel J. (2020) Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism. Journal of Applied Physics, 127 (7). 75301pp. doi:10.1063/1.5113875
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Gourley, P. L., Drummond, T. J., Doyle, B. L. (1986) Dislocation filtering in semiconductor superlattices with lattice‐matched and lattice‐mismatched layer materials. Applied Physics Letters, 49 (17). 1101-1103 doi:10.1063/1.97434
 
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