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Ono, S., Minder, N., Chen, Z., Facchetti, A., Morpurgo, A. F. (2010) High-performance n-type organic field-effect transistors with ionic liquid gates. Applied Physics Letters, 97 (14). 143307pp. doi:10.1063/1.3493190

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Reference TypeJournal (article/letter/editorial)
TitleHigh-performance n-type organic field-effect transistors with ionic liquid gates
JournalApplied Physics Letters
AuthorsOno, S.Author
Minder, N.Author
Chen, Z.Author
Facchetti, A.Author
Morpurgo, A. F.Author
Year2010 (October 4)Volume97
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3493190Search in ResearchGate
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Mindat Ref. ID8586999Long-form Identifiermindat:1:5:8586999:0
GUID0
Full ReferenceOno, S., Minder, N., Chen, Z., Facchetti, A., Morpurgo, A. F. (2010) High-performance n-type organic field-effect transistors with ionic liquid gates. Applied Physics Letters, 97 (14). 143307pp. doi:10.1063/1.3493190
Plain TextOno, S., Minder, N., Chen, Z., Facchetti, A., Morpurgo, A. F. (2010) High-performance n-type organic field-effect transistors with ionic liquid gates. Applied Physics Letters, 97 (14). 143307pp. doi:10.1063/1.3493190
In(2010, October) Applied Physics Letters Vol. 97 (14) AIP Publishing

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Barra, M., Di Girolamo, F. V., Minder, N. A., Gutiérrez Lezama, I., Chen, Z., Facchetti, A., Morpurgo, A. F., Cassinese, A. (2012) Very low bias stress in n-type organic single-crystal transistors. Applied Physics Letters, 100 (13). 133301pp. doi:10.1063/1.3698341
Nakano, M., Alves, H., Molinari, A. S., Ono, S., Minder, N., Morpurgo, A. F. (2010) Small gap semiconducting organic charge-transfer interfaces. Applied Physics Letters, 96 (23). 232102pp. doi:10.1063/1.3449558
Uemura, T., Yamagishi, M., Ono, S., Takeya, J. (2009) Low-voltage operation of n-type organic field-effect transistors with ionic liquid. Applied Physics Letters, 95 (10). 103301pp. doi:10.1063/1.3225153
Minder, Nikolas A., Ono, Shimpei, Chen, Zhihua, Facchetti, Antonio, Morpurgo, Alberto F. (2012) Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization. Advanced Materials, 24. 503-508 doi:10.1002/adma.201103960
Ono, S., Miwa, K., Seki, S. (2016) Determination of optimal ionic liquid for organic single-crystal field-effect transistors. Applied Physics Letters, 108 (6). 63301pp. doi:10.1063/1.4941667
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Uemura, Takafumi, Yamagishi, Masakazu, Ono, Shimpei, Takeya, Jun (2010) Very Low-Voltage Operation of Ionic Liquid-Gated n-Type Organic Field-Effect Transistors. Japanese Journal of Applied Physics, 49 (1) 1 doi:10.1143/jjap.49.01ab13
Caironi, M., Newman, C., Moore, J. R., Natali, D., Yan, H., Facchetti, A., Sirringhaus, H. (2010) Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors. Applied Physics Letters, 96 (18). 183303pp. doi:10.1063/1.3424792
Ono, S., Seki, S., Hirahara, R., Tominari, Y., Takeya, J. (2008) High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids. Applied Physics Letters, 92 (10). 103313pp. doi:10.1063/1.2898203
de Boer, R. W. I., Iosad, N. N., Stassen, A. F., Klapwijk, T. M., Morpurgo, A. F. (2005) Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors. Applied Physics Letters, 86 (3). 32103pp. doi:10.1063/1.1852089
Ono, S., Häusermann, R., Chiba, D., Shimamura, K., Ono, T., Batlogg, B. (2014) High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor. Applied Physics Letters, 104 (1). 13307pp. doi:10.1063/1.4860998
 
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