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Sawano, K., Hoshi, Y., Kasahara, K., Yamane, K., Hamaya, K., Miyao, M., Shiraki, Y. (2010) Ultrashallow Ohmic contacts for n-type Ge by Sb δ-doping. Applied Physics Letters, 97 (16). 162108pp. doi:10.1063/1.3503587

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Reference TypeJournal (article/letter/editorial)
TitleUltrashallow Ohmic contacts for n-type Ge by Sb δ-doping
JournalApplied Physics Letters
AuthorsSawano, K.Author
Hoshi, Y.Author
Kasahara, K.Author
Yamane, K.Author
Hamaya, K.Author
Miyao, M.Author
Shiraki, Y.Author
Year2010 (October 18)Volume97
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.3503587Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8587450Long-form Identifiermindat:1:5:8587450:3
GUID0
Full ReferenceSawano, K., Hoshi, Y., Kasahara, K., Yamane, K., Hamaya, K., Miyao, M., Shiraki, Y. (2010) Ultrashallow Ohmic contacts for n-type Ge by Sb δ-doping. Applied Physics Letters, 97 (16). 162108pp. doi:10.1063/1.3503587
Plain TextSawano, K., Hoshi, Y., Kasahara, K., Yamane, K., Hamaya, K., Miyao, M., Shiraki, Y. (2010) Ultrashallow Ohmic contacts for n-type Ge by Sb δ-doping. Applied Physics Letters, 97 (16). 162108pp. doi:10.1063/1.3503587
In(2010, October) Applied Physics Letters Vol. 97 (16) AIP Publishing

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Ando, Y., Kasahara, K., Yamane, K., Baba, Y., Maeda, Y., Hoshi, Y., Sawano, K., Miyao, M., Hamaya, K. (2011) Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact. Applied Physics Letters, 99 (1). 12113pp. doi:10.1063/1.3607480
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