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Yu, Xuegong, Wang, Peng, Yang, Deren (2010) Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon. Applied Physics Letters, 97 (16). 162107pp. doi:10.1063/1.3505499

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Reference TypeJournal (article/letter/editorial)
TitleEffect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon
JournalApplied Physics Letters
AuthorsYu, XuegongAuthor
Wang, PengAuthor
Yang, DerenAuthor
Year2010 (October 18)Volume97
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.3505499Search in ResearchGate
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Mindat Ref. ID8587540Long-form Identifiermindat:1:5:8587540:5
GUID0
Full ReferenceYu, Xuegong, Wang, Peng, Yang, Deren (2010) Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon. Applied Physics Letters, 97 (16). 162107pp. doi:10.1063/1.3505499
Plain TextYu, Xuegong, Wang, Peng, Yang, Deren (2010) Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon. Applied Physics Letters, 97 (16). 162107pp. doi:10.1063/1.3505499
In(2010, October) Applied Physics Letters Vol. 97 (16) AIP Publishing

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Yu, Xuegong, Wang, Peng, Chen, Peng, Li, Xiaoqiang, Yang, Deren (2010) Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping. Applied Physics Letters, 97 (5). 51903pp. doi:10.1063/1.3475486
Yu, Xuegong, Wang, Peng, Chen, Peng, Li, Xiaoqiang, Yang, Deren (2010) Publisher’s Note: “Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping” [Appl. Phys. Lett. 97, 051903 (2010)]. Applied Physics Letters, 97 (13). 139901pp. doi:10.1063/1.3483301
Li, Hong, Yang, Deren, Ma, Xiangyang, Yu, Xuegong, Que, Duanlin (2004) Germanium effect on oxygen precipitation in Czochralski silicon. Journal of Applied Physics, 96 (8). 4161-4165 doi:10.1063/1.1790578
Wu, Yichao, Yu, Xuegong, He, Hang, Chen, Peng, Yang, Deren (2015) Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping. Applied Physics Letters, 106 (10). 102105pp. doi:10.1063/1.4914889
Wu, Yichao, Yu, Xuegong, Chen, Peng, Chen, Xianzi, Yang, Deren (2014) Generation kinetics of boron-oxygen complexes in p-type compensated c-Si. Applied Physics Letters, 104 (10). 102108pp. doi:10.1063/1.4868635
Wu, Peng, Chen, Jiahe, Ma, Xiangyang, Yang, Deren (2010) Effect of vacancies on oxygen precipitation in germanium-doped Czochralski silicon. Journal of Applied Physics, 107 (7). 73518pp. doi:10.1063/1.3357380
Dong, Peng, Zhao, Jian, Liang, Xingbo, Tian, Daxi, Yuan, Shuai, Yu, Xuegong, Ma, Xiangyang, Yang, Deren (2015) Oxygen precipitation in 1020 cm−3 germanium-doped Czochralski silicon. Journal of Applied Physics, 117 (2). 25705pp. doi:10.1063/1.4905584
Li, Hong, Yang, Deren, Yu, Xuegong, Ma, Xiangyang, Tian, Daxi, Li, Liben, Que, Duanlin (2004) The effect of germanium doping on oxygen donors in Czochralski-grown silicon. Journal of Physics: Condensed Matter, 16 (32). 5745-5750 doi:10.1088/0953-8984/16/32/011
Zhu, Xiaodong, Yu, Xuegong, Li, Xiaoqiang, Wang, Peng, Yang, Deren (2012) Effect of Ge doping on the kinetics of iron–boron pair association and dissociation in photovoltaic silicon. Journal of Crystal Growth, 348 (1). 20-24 doi:10.1016/j.jcrysgro.2012.03.012
Dong, Peng, Yu, Xuegong, Chen, Lin, Ma, Xiangyang, Yang, Deren (2017) Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon. Journal of Applied Physics, 122 (9). 95704pp. doi:10.1063/1.5001139
Chen, Peng, Yu, Xuegong, Liu, Xiaoxia, Chen, Xianzi, Wu, Yichao, Yang, Deren (2013) Experimental evidence of staggered oxygen dimers as a component of boron-oxygen complexes in silicon. Applied Physics Letters, 102 (8). 82107pp. doi:10.1063/1.4793660
 
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