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Childres, Isaac, Jauregui, Luis A., Foxe, Michael, Tian, Jifa, Jalilian, Romaneh, Jovanovic, Igor, Chen, Yong P. (2010) Effect of electron-beam irradiation on graphene field effect devices. Applied Physics Letters, 97 (17). 173109pp. doi:10.1063/1.3502610

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Reference TypeJournal (article/letter/editorial)
TitleEffect of electron-beam irradiation on graphene field effect devices
JournalApplied Physics Letters
AuthorsChildres, IsaacAuthor
Jauregui, Luis A.Author
Foxe, MichaelAuthor
Tian, JifaAuthor
Jalilian, RomanehAuthor
Jovanovic, IgorAuthor
Chen, Yong P.Author
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3502610Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8587572Long-form Identifiermindat:1:5:8587572:4
GUID0
Full ReferenceChildres, Isaac, Jauregui, Luis A., Foxe, Michael, Tian, Jifa, Jalilian, Romaneh, Jovanovic, Igor, Chen, Yong P. (2010) Effect of electron-beam irradiation on graphene field effect devices. Applied Physics Letters, 97 (17). 173109pp. doi:10.1063/1.3502610
Plain TextChildres, Isaac, Jauregui, Luis A., Foxe, Michael, Tian, Jifa, Jalilian, Romaneh, Jovanovic, Igor, Chen, Yong P. (2010) Effect of electron-beam irradiation on graphene field effect devices. Applied Physics Letters, 97 (17). 173109pp. doi:10.1063/1.3502610
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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Cazalas, Edward, Sarker, Biddut K., Childres, Isaac, Chen, Yong P., Jovanovic, Igor (2016) Modulation of graphene field effect by heavy charged particle irradiation. Applied Physics Letters, 109 (25). 253501pp. doi:10.1063/1.4972398
Cazalas, Edward, Sarker, Biddut K., Moore, Michael E., Childres, Isaac, Chen, Yong P., Jovanovic, Igor (2015) Position sensitivity of graphene field effect transistors to X-rays. Applied Physics Letters, 106 (22). 223503pp. doi:10.1063/1.4921755
Childres, Isaac, Jauregui, Luis A, Tian, Jifa, Chen, Yong P (2011) Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements. New Journal of Physics, 13. 25008pp. doi:10.1088/1367-2630/13/2/025008
Cazalas, Edward, Childres, Isaac, Majcher, Amanda, Chung, Ting-Fung, Chen, Yong P., Jovanovic, Igor (2013) Hysteretic response of chemical vapor deposition graphene field effect transistors on SiC substrates. Applied Physics Letters, 103 (5). 53123pp. doi:10.1063/1.4816426
Childres, Isaac, Jauregui, Luis A., Chen, Yong P. (2014) Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping. Journal of Applied Physics, 116 (23). 233101pp. doi:10.1063/1.4903959
Tian, Jifa, Jiang, Yongjin, Childres, Isaac, Cao, Helin, Hu, Jiangping, Chen, Yong P. (2013) Quantum Hall effect in monolayer-bilayer graphene planar junctions. Physical Review B, 88 (12) doi:10.1103/physrevb.88.125410
Tian, J. F., Jauregui, L. A., Lopez, G., Cao, H., Chen, Y. P. (2010) Ambipolar graphene field effect transistors by local metal side gates. Applied Physics Letters, 96 (26). 263110pp. doi:10.1063/1.3459136
Cao, Helin, Yu, Qingkai, Jauregui, L. A., Tian, J., Wu, W., Liu, Z., Jalilian, R., Benjamin, D. K., Jiang, Z., Bao, J., Pei, S. S., Chen, Yong P. (2010) Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization. Applied Physics Letters, 96 (12). 122106pp. doi:10.1063/1.3371684
Cao, Helin, Yu, Qingkai, Jauregui, L. A., Tian, J., Wu, W., Liu, Z., Jalilian, R., Benjamin, D. K., Jiang, Z., Bao, J., Pei, S. S., Chen, Yong P. (2010) Erratum “Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization” [Appl. Phys. Lett. 96, 122106 (2010)]. Applied Physics Letters, 96 (25). 259901pp. doi:10.1063/1.3442914
Sarker, Biddut K., Cazalas, Edward, Chung, Ting-Fung, Childres, Isaac, Jovanovic, Igor, Chen, Yong P. (2017) Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC. Nature Nanotechnology, 12 (7). 668-674 doi:10.1038/nnano.2017.46
Jauregui, Luis A., Pettes, Michael T., Rokhinson, Leonid P., Shi, Li, Chen, Yong P. (2015) Gate Tunable Relativistic Mass and Berry's phase in Topological Insulator Nanoribbon Field Effect Devices. Scientific Reports, 5. doi:10.1038/srep08452
 
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