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Chowdhury, Md Delwar Hossain, Migliorato, Piero, Jang, Jin (2010) Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors. Applied Physics Letters, 97 (17). 173506pp. doi:10.1063/1.3503971

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Reference TypeJournal (article/letter/editorial)
TitleLight induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
JournalApplied Physics Letters
AuthorsChowdhury, Md Delwar HossainAuthor
Migliorato, PieroAuthor
Jang, JinAuthor
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3503971Search in ResearchGate
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Mindat Ref. ID8587579Long-form Identifiermindat:1:5:8587579:7
GUID0
Full ReferenceChowdhury, Md Delwar Hossain, Migliorato, Piero, Jang, Jin (2010) Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors. Applied Physics Letters, 97 (17). 173506pp. doi:10.1063/1.3503971
Plain TextChowdhury, Md Delwar Hossain, Migliorato, Piero, Jang, Jin (2010) Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors. Applied Physics Letters, 97 (17). 173506pp. doi:10.1063/1.3503971
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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Chowdhury, Md Delwar Hossain, Ryu, Sang Hyun, Migliorato, Piero, Jang, Jin (2011) Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors. Journal of Applied Physics, 110 (11). 114503pp. doi:10.1063/1.3662869
Hossain Chowdhury, Md Delwar, Migliorato, Piero, Jang, Jin (2013) Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K. Applied Physics Letters, 103 (15). 152103pp. doi:10.1063/1.4824875
Chowdhury, Md Delwar Hossain, Migliorato, Piero, Jang, Jin (2011) Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors. Applied Physics Letters, 98 (15). 153511pp. doi:10.1063/1.3580611
Hossain Chowdhury, Md Delwar, Migliorato, Piero, Jang, Jin (2013) Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors. Applied Physics Letters, 102 (14). 143506pp. doi:10.1063/1.4801762
Migliorato, Piero, Delwar Hossain Chowdhury, Md, Gwang Um, Jae, Seok, Manju, Jang, Jin (2012) Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor. Applied Physics Letters, 101 (12). 123502pp. doi:10.1063/1.4752238
Chowdhury, Md Delwar Hossain, Um, Jae Gwang, Jang, Jin (2014) Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C. Applied Physics Letters, 105 (23). 233504pp. doi:10.1063/1.4903874
Migliorato, Piero, Seok, Manju, Jang, Jin (2012) Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide. Applied Physics Letters, 100 (7). 73506pp. doi:10.1063/1.3685705
Lee, Eunji, Chowdhury, Md Delwar Hossain, Park, Min Sang, Jang, Jin (2015) Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor. Applied Physics Letters, 107 (23). 233509pp. doi:10.1063/1.4937441
Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, Jin (2015) Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors. Journal of Applied Physics, 117 (23). 234502pp. doi:10.1063/1.4922714
Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, Jin (2014) Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature. Journal of Applied Physics, 115 (13). 134502pp. doi:10.1063/1.4870458
Gwang Um, Jae, Mativenga, Mallory, Migliorato, Piero, Jang, Jin (2012) Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time. Applied Physics Letters, 101 (11). 113504pp. doi:10.1063/1.4751849
 
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