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Kang, Y. S., Kim, C. Y., Cho, M. -H., Chung, K. B., An, C. -H., Kim, H., Lee, H. J., Kim, C. S., Lee, T. G. (2010) Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition. Applied Physics Letters, 97 (17). 172108pp. doi:10.1063/1.3506695

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Reference TypeJournal (article/letter/editorial)
TitleThickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition
JournalApplied Physics Letters
AuthorsKang, Y. S.Author
Kim, C. Y.Author
Cho, M. -H.Author
Chung, K. B.Author
An, C. -H.Author
Kim, H.Author
Lee, H. J.Author
Kim, C. S.Author
Lee, T. G.Author
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3506695Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8587653Long-form Identifiermindat:1:5:8587653:8
GUID0
Full ReferenceKang, Y. S., Kim, C. Y., Cho, M. -H., Chung, K. B., An, C. -H., Kim, H., Lee, H. J., Kim, C. S., Lee, T. G. (2010) Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition. Applied Physics Letters, 97 (17). 172108pp. doi:10.1063/1.3506695
Plain TextKang, Y. S., Kim, C. Y., Cho, M. -H., Chung, K. B., An, C. -H., Kim, H., Lee, H. J., Kim, C. S., Lee, T. G. (2010) Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition. Applied Physics Letters, 97 (17). 172108pp. doi:10.1063/1.3506695
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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Kim, C. Y., Kang, Y. S., Lee, S. Y., Cho, M.-H., Chung, K. B., Kim, H., Na, S., Lee, H. J., Yun, H. J. (2010) Effect of interfacial reactions between atomic-layer-deposited HfO2 films and n-GaAs (100) substrate using postnitridation with NH3 vapor. Applied Physics Letters, 97 (9). 92113pp. doi:10.1063/1.3481801
Cho, M.-H., Chang, H. S., Moon, D. W., Kang, S. K., Min, B. K., Ko, D.-H., Kim, H. S., McIntyre, Paul C., Lee, J. H., Ku, J. H., Lee, N. I. (2004) Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition. Applied Physics Letters, 84 (7). 1171-1173 doi:10.1063/1.1647703
Kim, C. Y., Cho, S. W., Cho, M.-H., Chung, K. B., Suh, D. C., Ko, D.-H., An, C.-H., Kim, H., Lee, H. J. (2009) Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature. Applied Physics Letters, 95 (4). 42903pp. doi:10.1063/1.3182702
Kim, C. Y., Cho, S. W., Cho, M.-H., Chung, K. B., An, C.-H., Kim, H., Lee, H. J., Ko, D.-H. (2008) Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate. Applied Physics Letters, 93 (19). 192902pp. doi:10.1063/1.2996261
Kim, C. Y., Jeong, K. S., Kang, Y. S., Cho, S. W., Cho, M.-H., Chung, K. B., Ko, D.-H., Yi, Y., Kim, H. (2011) Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate. Journal of Applied Physics, 109 (11). 114112pp. doi:10.1063/1.3596521
Cho, Y.-J., Lee, W. J., Kim, C. Y., Cho, M.-H., Kim, H., Lee, H. J., Moon, D. W., Kang, H. J. (2008) Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001). The Journal of Chemical Physics, 129 (16). 164117pp. doi:10.1063/1.3000392
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Kim, Y., Lee, S. M., Park, C. S., Lee, S. I., Lee, M. Y. (1997) Substrate dependence on the optical properties of Al2O3 films grown by atomic layer deposition. Applied Physics Letters, 71 (25). 3604-3606 doi:10.1063/1.120454
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