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Weber, J. R., Janotti, A., Van de Walle, C. G. (2010) Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Applied Physics Letters, 97 (19). 192106pp. doi:10.1063/1.3518061

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Reference TypeJournal (article/letter/editorial)
TitleIntrinsic and extrinsic causes of electron accumulation layers on InAs surfaces
JournalApplied Physics Letters
AuthorsWeber, J. R.Author
Janotti, A.Author
Van de Walle, C. G.Author
Year2010 (November 8)Volume97
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3518061Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8588040Long-form Identifiermindat:1:5:8588040:7
GUID0
Full ReferenceWeber, J. R., Janotti, A., Van de Walle, C. G. (2010) Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Applied Physics Letters, 97 (19). 192106pp. doi:10.1063/1.3518061
Plain TextWeber, J. R., Janotti, A., Van de Walle, C. G. (2010) Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Applied Physics Letters, 97 (19). 192106pp. doi:10.1063/1.3518061
In(2010, November) Applied Physics Letters Vol. 97 (19) AIP Publishing

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Varley, J. B., Weber, J. R., Janotti, A., Van de Walle, C. G. (2010) Oxygen vacancies and donor impurities in β-Ga2O3. Applied Physics Letters, 97 (14). 142106pp. doi:10.1063/1.3499306
Varley, J. B., Weber, J. R., Janotti, A., Van de Walle, C. G. (2016) Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]. Applied Physics Letters, 108 (3). 39901pp. doi:10.1063/1.4940444
Lyons, J. L., Janotti, A., Van de Walle, C. G. (2010) Carbon impurities and the yellow luminescence in GaN. Applied Physics Letters, 97 (15). 152108pp. doi:10.1063/1.3492841
Weber, J. R., Janotti, A., Rinke, P., Van de Walle, C. G. (2007) Dangling-bond defects and hydrogen passivation in germanium. Applied Physics Letters, 91 (14). 142101pp. doi:10.1063/1.2793184
Ismer, Lars, Janotti, Anderson, Van de Walle, Chris G. (2010) Point-defect-mediated dehydrogenation of AlH3. Applied Physics Letters, 97 (20). 201902pp. doi:10.1063/1.3518475
Miao, M. S., Moses, P. G., Weber, J. R., Janotti, A., Van de Walle, C. G. (2010) Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces. EPL (Europhysics Letters), 89. 56004pp. doi:10.1209/0295-5075/89/56004
Varley, J. B., Weber, J. R., Janotti, A., Van de Walle, C. G. (2024) Dangling bonds, the charge neutrality level, and band alignment in semiconductors. Journal of Applied Physics, 135 (7) doi:10.1063/5.0190043
Dreyer, C. E., Janotti, A., Van de Walle, C. G. (2013) Effects of strain on the electron effective mass in GaN and AlN. Applied Physics Letters, 102 (14). 142105pp. doi:10.1063/1.4801520
Weber, J. R., Janotti, A., Van de Walle, C. G. (2011) Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices. Journal of Applied Physics, 109 (3). 33715pp. doi:10.1063/1.3544310
Varley, J. B., Schleife, A., Janotti, A., Van de Walle, C. G. (2013) Ambipolar doping in SnO. Applied Physics Letters, 103 (8). 82118pp. doi:10.1063/1.4819068
Mohamed, M., Janowitz, C., Unger, I., Manzke, R., Galazka, Z., Uecker, R., Fornari, R., Weber, J. R., Varley, J. B., Van de Walle, C. G. (2010) The electronic structure of β-Ga2O3. Applied Physics Letters, 97 (21). 211903pp. doi:10.1063/1.3521255
 
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