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Klenovský, P., Křápek, V., Munzar, D., Humlíček, J. (2010) Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters, 97 (20). 203107pp. doi:10.1063/1.3517446

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
JournalApplied Physics Letters
AuthorsKlenovský, P.Author
Křápek, V.Author
Munzar, D.Author
Humlíček, J.Author
Year2010 (November 15)Volume97
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3517446Search in ResearchGate
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Mindat Ref. ID8588315Long-form Identifiermindat:1:5:8588315:8
GUID0
Full ReferenceKlenovský, P., Křápek, V., Munzar, D., Humlíček, J. (2010) Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters, 97 (20). 203107pp. doi:10.1063/1.3517446
Plain TextKlenovský, P., Křápek, V., Munzar, D., Humlíček, J. (2010) Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters, 97 (20). 203107pp. doi:10.1063/1.3517446
In(2010, November) Applied Physics Letters Vol. 97 (20) AIP Publishing

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Klenovský, Petr, Křápek, Vlastimil, Munzar, Dominik, Humlíček, Josef (2010) Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer. Journal of Physics: Conference Series, 245. 12086pp. doi:10.1088/1742-6596/245/1/012086
Klenovský, P., Křápek, V., Humlíček, J. (2016) Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules. Acta Physica Polonica A, 129 (1). doi:10.12693/aphyspola.129.a-62
Křápek, V., Kuldová, K., Oswald, J., Hospodková, A., Hulicius, E., Humlíček, J. (2006) Elongation of InAs∕GaAs quantum dots from magnetophotoluminescence measurements. Applied Physics Letters, 89 (15). 153108pp. doi:10.1063/1.2358845
Klenovský, P., Hemzal, D., Steindl, P., Zíková, M., Křápek, V., Humlíček, J. (2015) Polarization anisotropy of the emission from type-II quantum dots. Physical Review B, 92 (24) doi:10.1103/physrevb.92.241302
Klenovský, P., Brehm, M., Křápek, V., Lausecker, E., Munzar, D., Hackl, F., Steiner, H., Fromherz, T., Bauer, G., Humlíček, J. (2012) Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition. Physical Review B, 86 (11) doi:10.1103/physrevb.86.115305
Kim, Yeongho, Ban, Keun-Yong, Boley, Allison, Smith, David J., Honsberg, Christiana B. (2015) Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots. Applied Physics Letters, 107 (17). 173109pp. doi:10.1063/1.4934695
Jang, Y. D., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Park, J., Lee, D., Liu, H. Y., Steer, M. J., Hopkinson, M. (2008) Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer. Applied Physics Letters, 92 (25). 251905pp. doi:10.1063/1.2949741
Křápek, V, Klenovský, P, Rastelli, A, Schmidt, O G, Munzar, D (2010) Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules. Journal of Physics: Conference Series, 245. 12027pp. doi:10.1088/1742-6596/245/1/012027
Jin, C. Y., Liu, H. Y., Zhang, S. Y., Jiang, Q., Liew, S. L., Hopkinson, M., Badcock, T. J., Nabavi, E., Mowbray, D. J. (2007) Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters, 91 (2). 21102pp. doi:10.1063/1.2752778
Ulloa, J. M., Koenraad, P. M., Bonnet-Eymard, M., Létoublon, A., Bertru, N. (2010) Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots. Journal of Applied Physics, 107 (7). 74309pp. doi:10.1063/1.3361036
Hakkarainen, T. V., Schramm, A., Tommila, J., Guina, M. (2012) The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100). Journal of Applied Physics, 111 (1). 14306pp. doi:10.1063/1.3675271
 
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