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Krishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth (2010) Polarization-engineered GaN/InGaN/GaN tunnel diodes. Applied Physics Letters, 97 (20). 203502pp. doi:10.1063/1.3517481

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Reference TypeJournal (article/letter/editorial)
TitlePolarization-engineered GaN/InGaN/GaN tunnel diodes
JournalApplied Physics Letters
AuthorsKrishnamoorthy, SriramAuthor
Nath, Digbijoy N.Author
Akyol, FatihAuthor
Park, Pil SungAuthor
Esposto, MicheleAuthor
Rajan, SiddharthAuthor
Year2010 (November 15)Volume97
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3517481Search in ResearchGate
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Mindat Ref. ID8588319Long-form Identifiermindat:1:5:8588319:4
GUID0
Full ReferenceKrishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth (2010) Polarization-engineered GaN/InGaN/GaN tunnel diodes. Applied Physics Letters, 97 (20). 203502pp. doi:10.1063/1.3517481
Plain TextKrishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth (2010) Polarization-engineered GaN/InGaN/GaN tunnel diodes. Applied Physics Letters, 97 (20). 203502pp. doi:10.1063/1.3517481
In(2010, November) Applied Physics Letters Vol. 97 (20) AIP Publishing

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Krishnamoorthy, Sriram, Akyol, Fatih, Park, Pil Sung, Rajan, Siddharth (2013) Low resistance GaN/InGaN/GaN tunnel junctions. Applied Physics Letters, 102 (11). 113503pp. doi:10.1063/1.4796041
Krishnamoorthy, Sriram, Akyol, Fatih, Rajan, Siddharth (2014) InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes. Applied Physics Letters, 105 (14). 141104pp. doi:10.1063/1.4897342
Sung Park, Pil, Nath, Digbijoy N., Krishnamoorthy, Sriram, Rajan, Siddharth (2012) Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization. Applied Physics Letters, 100 (6). 63507pp. doi:10.1063/1.3685483
Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Esposto, Michele, Neelim Nath, Digbijoy, Sung Park, Pil, Rajan, Siddharth (2013) Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces. Applied Physics Letters, 102 (7). 72105pp. doi:10.1063/1.4793483
Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth (2012) Polarization engineered 1-dimensional electron gas arrays. Journal of Applied Physics, 111 (4). 43715pp. doi:10.1063/1.3687938
Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth (2012) “Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]”. Journal of Applied Physics, 111 (9). 99901pp. doi:10.1063/1.4711074
Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth (2011) Demonstration of forward inter-band tunneling in GaN by polarization engineering. Applied Physics Letters, 99 (23). 233504pp. doi:10.1063/1.3666862
Akyol, Fatih, Krishnamoorthy, Sriram, Rajan, Siddharth (2013) Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop. Applied Physics Letters, 103 (8). 81107pp. doi:10.1063/1.4819737
Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth (2011) Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. Applied Physics Letters, 99 (13). 133503pp. doi:10.1063/1.3645616
Laskar, Masihhur R., Ma, Lu, Kannappan, Santhakumar, Sung Park, Pil, Krishnamoorthy, Sriram, Nath, Digbijoy N., Lu, Wu, Wu, Yiying, Rajan, Siddharth (2013) Large area single crystal (0001) oriented MoS2. Applied Physics Letters, 102 (25). 252108pp. doi:10.1063/1.4811410
Bajaj, Sanyam, Shoron, Omor F., Park, Pil Sung, Krishnamoorthy, Sriram, Akyol, Fatih, Hung, Ting-Hsiang, Reza, Shahed, Chumbes, Eduardo M., Khurgin, Jacob, Rajan, Siddharth (2015) Density-dependent electron transport and precise modeling of GaN high electron mobility transistors. Applied Physics Letters, 107 (15). 153504pp. doi:10.1063/1.4933181
 
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