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Le, H. Q., Chua, S. J., Koh, Y. W., Loh, K. P., Chen, Z., Thompson, C. V., Fitzgerald, E. A. (2010) Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]. Applied Physics Letters, 97 (23). 239903pp. doi:10.1063/1.3512959

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Reference TypeJournal (article/letter/editorial)
TitleRetraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]
JournalApplied Physics Letters
AuthorsLe, H. Q.Author
Chua, S. J.Author
Koh, Y. W.Author
Loh, K. P.Author
Chen, Z.Author
Thompson, C. V.Author
Fitzgerald, E. A.Author
Year2010 (December 6)Volume97
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.3512959Search in ResearchGate
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Mindat Ref. ID8588726Long-form Identifiermindat:1:5:8588726:0
GUID0
Full ReferenceLe, H. Q., Chua, S. J., Koh, Y. W., Loh, K. P., Chen, Z., Thompson, C. V., Fitzgerald, E. A. (2010) Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]. Applied Physics Letters, 97 (23). 239903pp. doi:10.1063/1.3512959
Plain TextLe, H. Q., Chua, S. J., Koh, Y. W., Loh, K. P., Chen, Z., Thompson, C. V., Fitzgerald, E. A. (2010) Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]. Applied Physics Letters, 97 (23). 239903pp. doi:10.1063/1.3512959
In(2010, December) Applied Physics Letters Vol. 97 (23) AIP Publishing

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Le, H. Q., Chua, S. J., Koh, Y. W., Loh, K. P., Chen, Z., Thompson, C. V., Fitzgerald, E. A. (2005) Growth of single crystal ZnO nanorods on GaN using an aqueous solution method. Applied Physics Letters, 87 (10). 101908pp. doi:10.1063/1.2041833
Le, H.Q., Chua, S.J., Koh, Y.W., Loh, K.P., Fitzgerald, E.A. (2006) Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis. Journal of Crystal Growth, 293 (1). 36-42 doi:10.1016/j.jcrysgro.2006.04.082
Chia, C. K., Chua, S. J., Miao, Z. L., Chye, Y. H. (2005) Erratum: “Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method” [Appl. Phys. Lett. 85, 567 (2004)]. Applied Physics Letters, 86 (5). 59903pp. doi:10.1063/1.1856694
Chang, H. J., Chen, C. H., Chen, Y. F., Lin, T. Y., Chen, L. C., Chen, K. H., Lan, Z. H. (2005) Response to “Comment on ‘Direct evidence of nanocluster-induced luminescence in InGaN epifilms’ ” [Appl. Phys. Lett. 87, 136101 (2005)]. Applied Physics Letters, 87 (13). 136102pp. doi:10.1063/1.2058204
Tay, C. B., Le, H. Q., Chua, S. J., Loh, K. P. (2007) Empirical Model for Density and Length Prediction of ZnO Nanorods on GaN Using Hydrothermal Synthesis. Journal of the Electrochemical Society, 154. doi:10.1149/1.2750449
Ding, Huanjun, Gao, Yongli (2010) Erratum: “Electronic structure of Cs-doped tris(8-hydroxyquinoline) aluminum” [Appl. Phys. Lett. 86, 213508 (2005)]. Applied Physics Letters, 96 (23). 239903pp. doi:10.1063/1.3449137
Zeng, Y. J., Ye, Z. Z. (2007) Comment on “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy” [Appl. Phys. Lett. 87, 252102 (2005)]. Applied Physics Letters, 90 (11). 116102pp. doi:10.1063/1.2713173
Nguyen, X. S., Lin, K., Zhang, Z., McSkimming, B., Arehart, A. R., Speck, J. S., Ringel, S. A., Fitzgerald, E. A., Chua, S. J. (2015) Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106, 102101 (2015)]. Applied Physics Letters, 106 (15). 159903pp. doi:10.1063/1.4918373
Matitsine, S. M., Liu, L., Chen, L. F., Gan, Y. B., Ong, C. K. (2005) Comment on “High microwave permittivity of multiwalled carbon nanotube composites” [Appl. Phys. Lett. 84, 4956 (2004)]. Applied Physics Letters, 87 (1). 16101pp. doi:10.1063/1.1978975
Ho, C. Y. (2006) Comment on “Effects of Cl2∕Ar dry etching on p-GaN with Ni∕Au metallization characterization” [Appl. Phys Lett. 87, 252107 (2005)]. Applied Physics Letters, 89 (13). 136101pp. doi:10.1063/1.2357025
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