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Song, J., Xu, F. J., Yan, X. D., Lin, F., Huang, C. C., You, L. P., Yu, T. J., Wang, X. Q., Shen, B., Wei, K., Liu, X. Y. (2010) High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures. Applied Physics Letters, 97 (23). 232106pp. doi:10.1063/1.3525713

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Reference TypeJournal (article/letter/editorial)
TitleHigh conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures
JournalApplied Physics Letters
AuthorsSong, J.Author
Xu, F. J.Author
Yan, X. D.Author
Lin, F.Author
Huang, C. C.Author
You, L. P.Author
Yu, T. J.Author
Wang, X. Q.Author
Shen, B.Author
Wei, K.Author
Liu, X. Y.Author
Year2010 (December 6)Volume97
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.3525713Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8588894Long-form Identifiermindat:1:5:8588894:0
GUID0
Full ReferenceSong, J., Xu, F. J., Yan, X. D., Lin, F., Huang, C. C., You, L. P., Yu, T. J., Wang, X. Q., Shen, B., Wei, K., Liu, X. Y. (2010) High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures. Applied Physics Letters, 97 (23). 232106pp. doi:10.1063/1.3525713
Plain TextSong, J., Xu, F. J., Yan, X. D., Lin, F., Huang, C. C., You, L. P., Yu, T. J., Wang, X. Q., Shen, B., Wei, K., Liu, X. Y. (2010) High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures. Applied Physics Letters, 97 (23). 232106pp. doi:10.1063/1.3525713
In(2010, December) Applied Physics Letters Vol. 97 (23) AIP Publishing

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