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Moreau, E., Godey, S., Ferrer, F. J., Vignaud, D., Wallart, X., Avila, J., Asensio, M. C., Bournel, F., Gallet, J.-J. (2010) Graphene growth by molecular beam epitaxy on the carbon-face of SiC. Applied Physics Letters, 97 (24). 241907pp. doi:10.1063/1.3526720

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Reference TypeJournal (article/letter/editorial)
TitleGraphene growth by molecular beam epitaxy on the carbon-face of SiC
JournalApplied Physics Letters
AuthorsMoreau, E.Author
Godey, S.Author
Ferrer, F. J.Author
Vignaud, D.Author
Wallart, X.Author
Avila, J.Author
Asensio, M. C.Author
Bournel, F.Author
Gallet, J.-J.Author
Year2010 (December 13)Volume97
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3526720Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8589026Long-form Identifiermindat:1:5:8589026:4
GUID0
Full ReferenceMoreau, E., Godey, S., Ferrer, F. J., Vignaud, D., Wallart, X., Avila, J., Asensio, M. C., Bournel, F., Gallet, J.-J. (2010) Graphene growth by molecular beam epitaxy on the carbon-face of SiC. Applied Physics Letters, 97 (24). 241907pp. doi:10.1063/1.3526720
Plain TextMoreau, E., Godey, S., Ferrer, F. J., Vignaud, D., Wallart, X., Avila, J., Asensio, M. C., Bournel, F., Gallet, J.-J. (2010) Graphene growth by molecular beam epitaxy on the carbon-face of SiC. Applied Physics Letters, 97 (24). 241907pp. doi:10.1063/1.3526720
In(2010, December) Applied Physics Letters Vol. 97 (24) AIP Publishing

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Moreau, E., Ferrer, F. J., Vignaud, D., Godey, S., Wallart, X. (2010) Graphene growth by molecular beam epitaxy using a solid carbon source. physica status solidi (a), 207 (2). 300-303 doi:10.1002/pssa.200982412
Moreau, E., Godey, S., Wallart, X., Razado-Colambo, I., Avila, J., Asensio, M.-C., Vignaud, D. (2013) High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC. Physical Review B, 88 (7) doi:10.1103/physrevb.88.075406
Ferrer, F. J., Moreau, E., Vignaud, D., Deresmes, D., Godey, S., Wallart, X. (2011) Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy. Journal of Applied Physics, 109 (5). 54307pp. doi:10.1063/1.3560896
Razado-Colambo, I., Avila, J., Vignaud, D., Godey, S., Wallart, X., Woodruff, D. P., Asensio, M. C. (2018) Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction. Scientific Reports, 8. doi:10.1038/s41598-018-28402-0
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Razado-Colambo, I., Avila, J., Nys, J.-P., Chen, C., Wallart, X., Asensio, M.-C., Vignaud, D. (2016) NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles. Scientific Reports, 6. doi:10.1038/srep27261
Vignaud, D., Wallart, X., Mollot, F. (1998) Direct and inverse equivalent InAlAs–InP interfaces grown by gas-source molecular beam epitaxy. Applied Physics Letters, 72 (9). 1075-1077 doi:10.1063/1.120969
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Deokar, G., Avila, J., Razado-Colambo, I., Codron, J.-L., Boyaval, C., Galopin, E., Asensio, M.-C., Vignaud, D. (2015) Towards high quality CVD graphene growth and transfer. Carbon, 89. 82-92 doi:10.1016/j.carbon.2015.03.017
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