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Wang, Z. S., Zeng, F., Yang, J., Chen, C., Yang, Y. C., Pan, F. (2010) Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure. Applied Physics Letters, 97 (25). 253301pp. doi:10.1063/1.3529455

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Reference TypeJournal (article/letter/editorial)
TitleReproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure
JournalApplied Physics Letters
AuthorsWang, Z. S.Author
Zeng, F.Author
Yang, J.Author
Chen, C.Author
Yang, Y. C.Author
Pan, F.Author
Year2010 (December 20)Volume97
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3529455Search in ResearchGate
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Mindat Ref. ID8589213Long-form Identifiermindat:1:5:8589213:8
GUID0
Full ReferenceWang, Z. S., Zeng, F., Yang, J., Chen, C., Yang, Y. C., Pan, F. (2010) Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure. Applied Physics Letters, 97 (25). 253301pp. doi:10.1063/1.3529455
Plain TextWang, Z. S., Zeng, F., Yang, J., Chen, C., Yang, Y. C., Pan, F. (2010) Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure. Applied Physics Letters, 97 (25). 253301pp. doi:10.1063/1.3529455
In(2010, December) Applied Physics Letters Vol. 97 (25) AIP Publishing

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