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Sankin, V. I., Monakhov, A. M., Shkrebiy, P. P., Abramov, P. L., Sablina, N. I., Averkiev, N. S. (2010) Peculiarities of impact ionization of Impurity Al in SiC polytypes. Applied Physics Letters, 97 (26). 262118pp. doi:10.1063/1.3527964

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Reference TypeJournal (article/letter/editorial)
TitlePeculiarities of impact ionization of Impurity Al in SiC polytypes
JournalApplied Physics Letters
AuthorsSankin, V. I.Author
Monakhov, A. M.Author
Shkrebiy, P. P.Author
Abramov, P. L.Author
Sablina, N. I.Author
Averkiev, N. S.Author
Year2010 (December 27)Volume97
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3527964Search in ResearchGate
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Mindat Ref. ID8589314Long-form Identifiermindat:1:5:8589314:6
GUID0
Full ReferenceSankin, V. I., Monakhov, A. M., Shkrebiy, P. P., Abramov, P. L., Sablina, N. I., Averkiev, N. S. (2010) Peculiarities of impact ionization of Impurity Al in SiC polytypes. Applied Physics Letters, 97 (26). 262118pp. doi:10.1063/1.3527964
Plain TextSankin, V. I., Monakhov, A. M., Shkrebiy, P. P., Abramov, P. L., Sablina, N. I., Averkiev, N. S. (2010) Peculiarities of impact ionization of Impurity Al in SiC polytypes. Applied Physics Letters, 97 (26). 262118pp. doi:10.1063/1.3527964
In(2010, December) Applied Physics Letters Vol. 97 (26) AIP Publishing

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Sankin, Vladimir Ilich, Averkiev, Nikita S., Monakhov, Andrey M., Shkrebiy, Pavel P., Lepneva, Alla A., Ostroumov, Andrey G., Abramov, Pavel L., Bogdanova, Elena V., Lebedev, Sergey P., Strelchuk, Anatoliy M. (2010) Breakdown of Impurity Al in SiC Polytypes. Materials Science Forum, 645. 451-454 doi:10.4028/www.scientific.net/msf.645-648.451
Sankin, V. I., Shkrebiy, P. P., Yakimova, R. (2006) Wannier-Stark ladder conditions in 4H-SiC p-n junctions grown on off axis substrates. Applied Physics Letters, 89 (23). 233508pp. doi:10.1063/1.2402207
Sankin, V. I., Shkrebiy, P. P., Yakimova, R. (2009) Strong field hole transport in 6H-SiC. Applied Physics Letters, 94 (8). 82101pp. doi:10.1063/1.3089233
Sankin, Vladimir Ilich, Andrianov, Alexander V., Petrov, A.G., Zacharin, A.O., Nagalyuk, Sergey S., Shkrebiy, Pavel P., Sablina, Natalia I. (2015) The Bloch Oscillations and THz Electroluminescence in Natural Superlattices of 6H-, 8H-SiC Polytypes. Materials Science Forum, 821. 277-280 doi:10.4028/www.scientific.net/msf.821-823.277
Sankin, Vladimir Ilich, Monakhov, Andrey M., Shkrebiy, Pavel P. (2007) The Premature Breakdown in 6H-SiC p-n Junction. Materials Science Forum, 556. 431-434 doi:10.4028/www.scientific.net/msf.556-557.431
Lebedev, A. A., Abramov, P. L., Agrinskaya, N. V., Kozub, V. I., Lebedev, S. P., Oganesyan, G. A., Tregubova, A. S., Shamshur, D. V., Skvortsova, M. O. (2009) Metal-insulator transition in n-3C-SiC epitaxial films. Journal of Applied Physics, 105 (2). 23706pp. doi:10.1063/1.3065989
Sankin, V. I., Petrov, A. G., Kaliteevski, M. (2013) Impact ionization of nitrogen in 4H- and 6H-SiC. Journal of Applied Physics, 114 (6). 63704pp. doi:10.1063/1.4817731
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Andrianov, A. V., Gupta, J. P., Kolodzey, J., Sankin, V. I., Zakhar'in, A. O., Vasilyev, Yu. B. (2013) Current injection induced terahertz emission from 4H-SiC p-n junctions. Applied Physics Letters, 103 (22). 221101pp. doi:10.1063/1.4832824
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Ghin, R., David, J. P. R., Hopkinson, M., Pate, M. A., Rees, G. J., Robson, P. N. (1997) Impact ionization coefficients in GaInPp–i–ndiodes. Applied Physics Letters, 70 (26). 3567-3569 doi:10.1063/1.119235
 
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