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Sarkar, Deblina, Krall, Michael, Banerjee, Kaustav (2010) Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors. Applied Physics Letters, 97 (26). 263109pp. doi:10.1063/1.3528338

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Reference TypeJournal (article/letter/editorial)
TitleElectron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors
JournalApplied Physics Letters
AuthorsSarkar, DeblinaAuthor
Krall, MichaelAuthor
Banerjee, KaustavAuthor
Year2010 (December 27)Volume97
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3528338Search in ResearchGate
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Mindat Ref. ID8589317Long-form Identifiermindat:1:5:8589317:3
GUID0
Full ReferenceSarkar, Deblina, Krall, Michael, Banerjee, Kaustav (2010) Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors. Applied Physics Letters, 97 (26). 263109pp. doi:10.1063/1.3528338
Plain TextSarkar, Deblina, Krall, Michael, Banerjee, Kaustav (2010) Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors. Applied Physics Letters, 97 (26). 263109pp. doi:10.1063/1.3528338
In(2010, December) Applied Physics Letters Vol. 97 (26) AIP Publishing

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Sarkar, Deblina, Gossner, Harald, Hansch, Walter, Banerjee, Kaustav (2013) Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer. Applied Physics Letters, 102 (2). 23110pp. doi:10.1063/1.4775358
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Sant, S., Schenk, A. (2017) The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors. Journal of Applied Physics, 122 (13). 135702pp. doi:10.1063/1.4994112
Padilla, J. L., Palomares, A., Alper, C., Gámiz, F., Ionescu, A. M. (2016) Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor. Journal of Applied Physics, 119 (4). 45705pp. doi:10.1063/1.4940741
Ganapathi, Kartik, Yoon, Youngki, Salahuddin, Sayeef (2010) Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance. Applied Physics Letters, 97 (3). 33504pp. doi:10.1063/1.3466908
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