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Fernandes, P. G., Seitz, O., Chapman, R. A., Stiegler, H. J., Wen, H. -C., Chabal, Y. J., Vogel, E. M. (2010) Effect of mobile ions on ultrathin silicon-on-insulator-based sensors. Applied Physics Letters, 97 (3). 34103pp. doi:10.1063/1.3463453

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Reference TypeJournal (article/letter/editorial)
TitleEffect of mobile ions on ultrathin silicon-on-insulator-based sensors
JournalApplied Physics Letters
AuthorsFernandes, P. G.Author
Seitz, O.Author
Chapman, R. A.Author
Stiegler, H. J.Author
Wen, H. -C.Author
Chabal, Y. J.Author
Vogel, E. M.Author
Year2010 (July 19)Volume97
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3463453Search in ResearchGate
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Mindat Ref. ID8589543Long-form Identifiermindat:1:5:8589543:6
GUID0
Full ReferenceFernandes, P. G., Seitz, O., Chapman, R. A., Stiegler, H. J., Wen, H. -C., Chabal, Y. J., Vogel, E. M. (2010) Effect of mobile ions on ultrathin silicon-on-insulator-based sensors. Applied Physics Letters, 97 (3). 34103pp. doi:10.1063/1.3463453
Plain TextFernandes, P. G., Seitz, O., Chapman, R. A., Stiegler, H. J., Wen, H. -C., Chabal, Y. J., Vogel, E. M. (2010) Effect of mobile ions on ultrathin silicon-on-insulator-based sensors. Applied Physics Letters, 97 (3). 34103pp. doi:10.1063/1.3463453
In(2010, July) Applied Physics Letters Vol. 97 (3) AIP Publishing

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