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Kisoda, Kenji, Kamoi, Susumu, Hasuike, Noriyuki, Harima, Hiroshi, Morita, Kouhei, Tanaka, Satoru, Hashimoto, Akihiro (2010) Few-layer epitaxial graphene grown on vicinal 6H–SiC studied by deep ultraviolet Raman spectroscopy. Applied Physics Letters, 97 (3). 33108pp. doi:10.1063/1.3466150

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Reference TypeJournal (article/letter/editorial)
TitleFew-layer epitaxial graphene grown on vicinal 6H–SiC studied by deep ultraviolet Raman spectroscopy
JournalApplied Physics Letters
AuthorsKisoda, KenjiAuthor
Kamoi, SusumuAuthor
Hasuike, NoriyukiAuthor
Harima, HiroshiAuthor
Morita, KouheiAuthor
Tanaka, SatoruAuthor
Hashimoto, AkihiroAuthor
Year2010 (July 19)Volume97
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3466150Search in ResearchGate
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Mindat Ref. ID8589629Long-form Identifiermindat:1:5:8589629:5
GUID0
Full ReferenceKisoda, Kenji, Kamoi, Susumu, Hasuike, Noriyuki, Harima, Hiroshi, Morita, Kouhei, Tanaka, Satoru, Hashimoto, Akihiro (2010) Few-layer epitaxial graphene grown on vicinal 6H–SiC studied by deep ultraviolet Raman spectroscopy. Applied Physics Letters, 97 (3). 33108pp. doi:10.1063/1.3466150
Plain TextKisoda, Kenji, Kamoi, Susumu, Hasuike, Noriyuki, Harima, Hiroshi, Morita, Kouhei, Tanaka, Satoru, Hashimoto, Akihiro (2010) Few-layer epitaxial graphene grown on vicinal 6H–SiC studied by deep ultraviolet Raman spectroscopy. Applied Physics Letters, 97 (3). 33108pp. doi:10.1063/1.3466150
In(2010, July) Applied Physics Letters Vol. 97 (3) AIP Publishing


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