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Gao, Cunxu, Schönherr, Hans-Peter, Brandt, Oliver (2010) Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy. Applied Physics Letters, 97 (3). 31906pp. doi:10.1063/1.3467136

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Reference TypeJournal (article/letter/editorial)
TitleReflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsGao, CunxuAuthor
Schönherr, Hans-PeterAuthor
Brandt, OliverAuthor
Year2010 (July 19)Volume97
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3467136Search in ResearchGate
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Mindat Ref. ID8589680Long-form Identifiermindat:1:5:8589680:6
GUID0
Full ReferenceGao, Cunxu, Schönherr, Hans-Peter, Brandt, Oliver (2010) Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy. Applied Physics Letters, 97 (3). 31906pp. doi:10.1063/1.3467136
Plain TextGao, Cunxu, Schönherr, Hans-Peter, Brandt, Oliver (2010) Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy. Applied Physics Letters, 97 (3). 31906pp. doi:10.1063/1.3467136
In(2010, July) Applied Physics Letters Vol. 97 (3) AIP Publishing

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Gao, Cunxu, Brandt, Oliver, Schönherr, Hans-Peter, Jahn, Uwe, Herfort, Jens, Jenichen, Bernd (2009) Thermal stability of epitaxial Fe films on GaN(0001). Applied Physics Letters, 95 (11). 111906pp. doi:10.1063/1.3230004
Gao, Cunxu, Brandt, Oliver, Erwin, Steven C., Lähnemann, Jonas, Jahn, Uwe, Jenichen, Bernd, Schönherr, Hans-Peter (2010) “Cube-on-hexagon” orientation relationship for Fe onGaN(0001¯): The missing link in bcc/hcp epitaxy. Physical Review B, 82 (12) doi:10.1103/physrevb.82.125415
Gao, Cunxu, Brandt, Oliver, Lähnemann, Jonas, Herfort, Jens, Schönherr, Hans-Peter, Jahn, Uwe, Jenichen, Bernd (2011) Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001). Journal of Crystal Growth, 323 (1). 359-362 doi:10.1016/j.jcrysgro.2010.10.117
Fernández-Garrido, Sergio, Ubben, Kai U., Herfort, Jens, Gao, Cunxu, Brandt, Oliver (2012) Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts. Applied Physics Letters, 101 (3). 32404pp. doi:10.1063/1.4737905
Grandjean, N., Massies, J. (1997) GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction. Applied Physics Letters, 71 (13). 1816-1818 doi:10.1063/1.119408
Brandt, Oliver, Sun, Yue Jun, Schönherr, Hans-Peter, Ploog, Klaus H., Waltereit, Patrick, Lim, Sung-Hwan, Speck, James S. (2003) Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 83 (1). 90-92 doi:10.1063/1.1590428
Dimakis, E., Iliopoulos, E., Tsagaraki, K., Kehagias, Th., Komninou, Ph., Georgakilas, A. (2005) Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics, 97 (11). 113520pp. doi:10.1063/1.1923166
Dinh, Duc V., Lähnemann, Jonas, Geelhaar, Lutz, Brandt, Oliver (2023) Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 122 (15) 152103 doi:10.1063/5.0137873
Fahy, M. R., Sato, K., Joyce, B. A. (1994) Reflection high‐energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A. Applied Physics Letters, 64 (2). 190-192 doi:10.1063/1.111528
Springholz, G., Bauer, G. (1992) Investigation of Pb1−xEuxTe molecular beam epitaxy by reflection high‐energy electron diffraction intensity oscillations. Applied Physics Letters, 60 (13). 1600-1602 doi:10.1063/1.107238
Adelmann, C., Langer, R., Feuillet, G., Daudin, B. (1999) Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations. Applied Physics Letters, 75 (22). 3518-3520 doi:10.1063/1.125374
 
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