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Hong, X., Hoffman, J., Posadas, A., Zou, K., Ahn, C. H., Zhu, J. (2010) Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3. Applied Physics Letters, 97 (3). 33114pp. doi:10.1063/1.3467450

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Reference TypeJournal (article/letter/editorial)
TitleUnusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3
JournalApplied Physics Letters
AuthorsHong, X.Author
Hoffman, J.Author
Posadas, A.Author
Zou, K.Author
Ahn, C. H.Author
Zhu, J.Author
Year2010 (July 19)Volume97
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3467450Search in ResearchGate
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Mindat Ref. ID8589699Long-form Identifiermindat:1:5:8589699:4
GUID0
Full ReferenceHong, X., Hoffman, J., Posadas, A., Zou, K., Ahn, C. H., Zhu, J. (2010) Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3. Applied Physics Letters, 97 (3). 33114pp. doi:10.1063/1.3467450
Plain TextHong, X., Hoffman, J., Posadas, A., Zou, K., Ahn, C. H., Zhu, J. (2010) Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3. Applied Physics Letters, 97 (3). 33114pp. doi:10.1063/1.3467450
In(2010, July) Applied Physics Letters Vol. 97 (3) AIP Publishing

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Hong, X., Posadas, A., Zou, K., Ahn, C. H., Zhu, J. (2009) High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides. Physical Review Letters, 102 (13). doi:10.1103/physrevlett.102.136808
Vaz, C. A. F., Segal, Y., Hoffman, J., Grober, R. D., Walker, F. J., Ahn, C. H. (2010) Temperature dependence of the magnetoelectric effect in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures. Applied Physics Letters, 97 (4). 42506pp. doi:10.1063/1.3472259
Sambri, A., Gariglio, S., Torres Pardo, A., Triscone, J.-M., Stéphan, O., Reiner, J. W., Ahn, C. H. (2011) Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon. Applied Physics Letters, 98 (1). 12903pp. doi:10.1063/1.3532110
Lin, A., Hong, X., Wood, V., Verevkin, A. A., Ahn, C. H., McKee, R. A., Walker, F. J., Specht, E. D. (2001) Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties. Applied Physics Letters, 78 (14). 2034-2036 doi:10.1063/1.1358848
Tybell, T., Ahn, C. H., Triscone, J.-M. (1998) Control and imaging of ferroelectric domains over large areas with nanometer resolution in atomically smooth epitaxial Pb(Zr0.2Ti0.8)O3 thin films. Applied Physics Letters, 72 (12). 1454-1456 doi:10.1063/1.120591
Vaz, C. A. F., Hoffman, J., Segal, Y., Marshall, M. S. J., Reiner, J. W., Zhang, Z., Grober, R. D., Walker, F. J., Ahn, C. H. (2011) Control of magnetism in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures (invited). Journal of Applied Physics, 109 (7). 7pp. doi:10.1063/1.3540694
Zhu, J., Jhaveri, R., Woo, J. C. S. (2010) The effect of traps on the performance of graphene field-effect transistors. Applied Physics Letters, 96 (19). 193503pp. doi:10.1063/1.3428785
Liu, Hong, Gong, Xiaogang, Liang, Jin-e, Li, Xuedong, Xiao, Dingquan, Zhu, Jianguo, Pu, Zhaohui (2007) Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3∕Pb(Zr0.2Ti0.8)O3 multilayer films. Applied Physics Letters, 91 (12). 122906pp. doi:10.1063/1.2783482
Hong, X., Posadas, A., Ahn, C. H. (2005) Examining the screening limit of field effect devices via the metal-insulator transition. Applied Physics Letters, 86 (14). 142501pp. doi:10.1063/1.1897076
Wu, Jiagang, Xiao, Dingquan, Zhu, Jiliang, Zhu, Jianguo (2007) Orientation dependence of dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3∕Pb(Zr0.2Ti0.8)O3 multilayered thin films. Applied Physics Letters, 91 (19). 192901pp. doi:10.1063/1.2807839
Wu, J. G., Xiao, D. Q., Zhu, J. G., Zhu, J. L., Tan, J. Z., Zhang, Q. L. (2007) Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3∕Pb(Zr0.2Ti0.8)O3 multilayered thin films prepared by rf magnetron sputtering. Applied Physics Letters, 90 (8). 82902pp. doi:10.1063/1.2475735
 
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