Kim, Un Jeong, Son, Hyung Bin, Lee, Eun Hong, Kim, Jong Min, Min, Shin Chul, Park, Wanjun (2010) Charge conversion effects of carbon nanotube network transistors by temperature for Al2O3 gate dielectric formation. Applied Physics Letters, 97 (3). 32117pp. doi:10.1063/1.3467470
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Charge conversion effects of carbon nanotube network transistors by temperature for Al2O3 gate dielectric formation | ||
| Journal | Applied Physics Letters | ||
| Authors | Kim, Un Jeong | Author | |
| Son, Hyung Bin | Author | ||
| Lee, Eun Hong | Author | ||
| Kim, Jong Min | Author | ||
| Min, Shin Chul | Author | ||
| Park, Wanjun | Author | ||
| Year | 2010 (July 19) | Volume | 97 |
| Issue | 3 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3467470Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8589715 | Long-form Identifier | mindat:1:5:8589715:1 |
| GUID | 0 | ||
| Full Reference | Kim, Un Jeong, Son, Hyung Bin, Lee, Eun Hong, Kim, Jong Min, Min, Shin Chul, Park, Wanjun (2010) Charge conversion effects of carbon nanotube network transistors by temperature for Al2O3 gate dielectric formation. Applied Physics Letters, 97 (3). 32117pp. doi:10.1063/1.3467470 | ||
| Plain Text | Kim, Un Jeong, Son, Hyung Bin, Lee, Eun Hong, Kim, Jong Min, Min, Shin Chul, Park, Wanjun (2010) Charge conversion effects of carbon nanotube network transistors by temperature for Al2O3 gate dielectric formation. Applied Physics Letters, 97 (3). 32117pp. doi:10.1063/1.3467470 | ||
| In | (2010, July) Applied Physics Letters Vol. 97 (3) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
