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Berland, Kristian, Stattin, Martin, Farivar, Rashid, Sultan, D. M. S., Hyldgaard, Per, Larsson, Anders, Wang, Shu Min, Andersson, Thorvald G. (2010) Temperature stability of intersubband transitions in AlN/GaN quantum wells. Applied Physics Letters, 97 (4). 43507pp. doi:10.1063/1.3456528

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Reference TypeJournal (article/letter/editorial)
TitleTemperature stability of intersubband transitions in AlN/GaN quantum wells
JournalApplied Physics Letters
AuthorsBerland, KristianAuthor
Stattin, MartinAuthor
Farivar, RashidAuthor
Sultan, D. M. S.Author
Hyldgaard, PerAuthor
Larsson, AndersAuthor
Wang, Shu MinAuthor
Andersson, Thorvald G.Author
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3456528Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8589733Long-form Identifiermindat:1:5:8589733:7
GUID0
Full ReferenceBerland, Kristian, Stattin, Martin, Farivar, Rashid, Sultan, D. M. S., Hyldgaard, Per, Larsson, Anders, Wang, Shu Min, Andersson, Thorvald G. (2010) Temperature stability of intersubband transitions in AlN/GaN quantum wells. Applied Physics Letters, 97 (4). 43507pp. doi:10.1063/1.3456528
Plain TextBerland, Kristian, Stattin, Martin, Farivar, Rashid, Sultan, D. M. S., Hyldgaard, Per, Larsson, Anders, Wang, Shu Min, Andersson, Thorvald G. (2010) Temperature stability of intersubband transitions in AlN/GaN quantum wells. Applied Physics Letters, 97 (4). 43507pp. doi:10.1063/1.3456528
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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Ive, Tommy, Berland, Kristian, Stattin, Martin, Fälth, Fredrik, Hyldgaard, Per, Larsson, Anders, Andersson, Thorvald G. (2012) Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.1143/jjap.51.01ag07
Ive, Tommy, Berland, Kristian, Stattin, Martin, Fälth, Fredrik, Hyldgaard, Per, Larsson, Anders, Andersson, Thorvald G. (2012) Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ag07
Stattin, Martin, Berland, Kristian, Hyldgaard, Per, Larsson, Anders, Andersson, Thorvald G. (2011) Waveguides for nitride based quantum cascade lasers. physica status solidi (c), 8 (7). 2357-2359 doi:10.1002/pssc.201000987
Berland, Kristian, Andersson, Thorvald G., Hyldgaard, Per (2011) Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures. Physical Review B, 84 (24) doi:10.1103/physrevb.84.245313
Farivar, Rashid, Andersson, Thorvald G. (2010) Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy. physica status solidi (c), 7 (1). 25-27 doi:10.1002/pssc.200982610
Rapaport, R., Chen, Gang, Mitrofanov, O., Gmachl, C., Ng, H. M., Chu, S. N. G. (2003) Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells. Applied Physics Letters, 83 (2). 263-265 doi:10.1063/1.1591247
Berland, Kristian, Hyldgaard, Per (2010) Structure and binding in crystals of cagelike molecules: Hexamine and platonic hydrocarbons. The Journal of Chemical Physics, 132 (13). 134705pp. doi:10.1063/1.3366652
Chen, Weiquan, Andersson, T. G. (1992) Intersubband transitions for differently shaped quantum wells under an applied electric field. Applied Physics Letters, 60 (13). 1591-1593 doi:10.1063/1.107261
Cen, L. B., Shen, B., Qin, Z. X., Zhang, G. Y. (2009) Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells. Journal of Applied Physics, 105 (5). 53106pp. doi:10.1063/1.3091280
Nevou, L., Tchernycheva, M., Julien, F. H., Guillot, F., Monroy, E. (2007) Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature. Applied Physics Letters, 90 (12). 121106pp. doi:10.1063/1.2715001
Sodabanlu, Hassanet, Yang, Jung-Seung, Sugiyama, Masakazu, Shimogaki, Yukihiro, Nakano, Yoshiaki (2009) Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer. Applied Physics Letters, 95 (16). 161908pp. doi:10.1063/1.3253715
 
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