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Wright, A. R., O’Brien, T. E., Beaven, D., Zhang, C. (2010) Gapless insulator and a band gap scaling law in semihydrogenated graphene. Applied Physics Letters, 97 (4). 43104pp. doi:10.1063/1.3469941

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Reference TypeJournal (article/letter/editorial)
TitleGapless insulator and a band gap scaling law in semihydrogenated graphene
JournalApplied Physics Letters
AuthorsWright, A. R.Author
O’Brien, T. E.Author
Beaven, D.Author
Zhang, C.Author
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3469941Search in ResearchGate
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Mindat Ref. ID8589853Long-form Identifiermindat:1:5:8589853:0
GUID0
Full ReferenceWright, A. R., O’Brien, T. E., Beaven, D., Zhang, C. (2010) Gapless insulator and a band gap scaling law in semihydrogenated graphene. Applied Physics Letters, 97 (4). 43104pp. doi:10.1063/1.3469941
Plain TextWright, A. R., O’Brien, T. E., Beaven, D., Zhang, C. (2010) Gapless insulator and a band gap scaling law in semihydrogenated graphene. Applied Physics Letters, 97 (4). 43104pp. doi:10.1063/1.3469941
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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Szafranek, B. N., Schall, D., Otto, M., Neumaier, D., Kurz, H. (2010) Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature. Applied Physics Letters, 96 (11). 112103pp. doi:10.1063/1.3364139
Nahory, R. E., Pollack, M. A., Johnston, W. D., Barns, R. L. (1978) Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−ylattice matched to InP. Applied Physics Letters, 33 (7). 659-661 doi:10.1063/1.90455
 
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